IXGX64N60B3D1 Datasheet and Replacement
Type Designator: IXGX64N60B3D1
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 460 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 64(110°C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.59 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 41 nS
Coesⓘ - Output Capacitance, typ: 260 pF
Package: PLUS247
IXGX64N60B3D1 substitution
IXGX64N60B3D1 Datasheet (PDF)
ixgx64n60b3d1.pdf

VCES = 600VGenX3TM 600V IGBTIXGK64N60B3D1IC110 = 64Awith DiodeIXGX64N60B3D1VCE(sat) 1.8VMedium speed low Vsat PT tfi(typ) = 88nsIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 V C (TAB)EVGEM Transient 30 VIC110
ixgx60n60b2d1.pdf

Advance Technical DataIXGK60N60B2D1 VCES = 600 VHiPerFASTTMIXGX 60N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat)
ixgk60n60b2d1 ixgx60n60b2d1.pdf

Advance Technical DataIXGK60N60B2D1 VCES = 600 VHiPerFASTTMIXGX 60N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat)
ixgx60n60c2d1.pdf

IXGK 60N60C2D1VCES = 600 VHiPerFASTTMIXGX 60N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 35 nsSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads)
Datasheet: IXGX50N60A2D1 , IXGX50N60B2D1 , IXGX50N60BD1 , IXGX50N60C2D1 , IXGX50N90B2D1 , IXGX55N120A3H1 , IXGX60N60B2D1 , IXGX60N60C2D1 , KGF75N65KDF , IXGX72N60A3H1 , IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A .
History: SKM300GA123D | IRG4P254S
Keywords - IXGX64N60B3D1 transistor datasheet
IXGX64N60B3D1 cross reference
IXGX64N60B3D1 equivalent finder
IXGX64N60B3D1 lookup
IXGX64N60B3D1 substitution
IXGX64N60B3D1 replacement
History: SKM300GA123D | IRG4P254S



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