IXGX72N60A3H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGX72N60A3H1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 540 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 34 nS
Coesⓘ - Capacitancia de salida, typ: 360 pF
Qgⓘ - Carga total de la puerta, typ: 230 nC
Paquete / Cubierta: PLUS247
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IXGX72N60A3H1 Datasheet (PDF)
ixgk72n60a3h1 ixgx72n60a3h1.pdf
Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGK72N60A3H1w/Diode IC110 = 72AIXGX72N60A3H1VCE(sat) 1.35Vtfi(typ) = 250nsUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V (TAB)GVGES Continuous 20 VCE
ixgx72n60a3h1.pdf
Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGK72N60A3H1w/Diode IC110 = 72AIXGX72N60A3H1VCE(sat) 1.35Vtfi(typ) = 250nsUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V (TAB)GVGES Continuous 20 VCE
ixgx72n60c3h1.pdf
VCES = 600VGenX3TM 600V IGBTIXGX72N60C3H1IC110 = 72Awith DiodeVCE(sat) 2.5Vtfi(typ) = 55nsHigh-Speed PT IGBT for40-100kHz SwitchingPLUS247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGGDVGES Continuous 20 V CES TabVGEM Transient 30 VIC25 TC = 25C (Limited by L
ixgx72n60b3h1.pdf
Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGK72N60B3H1IC110 = 72Awith DiodeIXGX72N60B3H1VCE(sat) 1.8Vtfi(typ) = 92nsMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V (
ixgx75n250.pdf
Preliminary Technical InformationHigh Voltage IGBTs VCES = 2500VIXGK75N250IC110 = 75AIXGX75N250For Capacitor Discharge VCE(sat) 2.7V ApplicationsTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)
ixgk75n250-ixgx75n250.pdf
Preliminary Technical InformationHigh Voltage IGBTs VCES = 2500VIXGK75N250IC110 = 75AIXGX75N250For Capacitor Discharge VCE(sat) 2.7V ApplicationsTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)
Otros transistores... IXGX50N60B2D1 , IXGX50N60BD1 , IXGX50N60C2D1 , IXGX50N90B2D1 , IXGX55N120A3H1 , IXGX60N60B2D1 , IXGX60N60C2D1 , IXGX64N60B3D1 , TGAN40N60FD , IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , IXRA15N120 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2