IXGX72N60A3H1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXGX72N60A3H1 Specs and Replacement

Type Designator: IXGX72N60A3H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 540 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35(max) V @25℃

tr ⓘ - Rise Time, typ: 34 nS

Coesⓘ - Output Capacitance, typ: 360 pF

Package: PLUS247

IXGX72N60A3H1 Substitution

- IGBT ⓘ Cross-Reference Search

IXGX72N60A3H1 datasheet

..1. Size:229K ixys
ixgk72n60a3h1 ixgx72n60a3h1.pdf pdf_icon

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 VCE(sat) 1.35V tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V (TAB) G VGES Continuous 20 V C E ... See More ⇒

..2. Size:227K ixys
ixgx72n60a3h1.pdf pdf_icon

5.1. Size:211K ixys
ixgx72n60c3h1.pdf pdf_icon

VCES = 600V GenX3TM 600V IGBT IXGX72N60C3H1 IC110 = 72A with Diode VCE(sat) 2.5V tfi(typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G G D VGES Continuous 20 V C ES Tab VGEM Transient 30 V IC25 TC = 25 C (Limited by L... See More ⇒

5.2. Size:221K ixys
ixgx72n60b3h1.pdf pdf_icon

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGK72N60B3H1 IC110 = 72A with Diode IXGX72N60B3H1 VCE(sat) 1.8V tfi(typ) = 92ns Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G C VGES Continuous 20 V (... See More ⇒