STGWT40HP65FB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWT40HP65FB  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 283 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

Coesⓘ - Capacitancia de salida, typ: 198 pF

Encapsulados: TO3P

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STGWT40HP65FB datasheet

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STGWT40HP65FB

STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB Maximum junction temperature T = 175 C J Minimized tail current V = 1.6 V (typ.) @ I = 40 A CE(sat) C Tight parameter distribution Co-packed diode for protection 3 Safe paralleling 2 1 Low thermal resistance TO-3P Applica

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STGWT40HP65FB

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STGWT40HP65FB

STGW40H60DLFB, STGWT40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A 3 2 3 Tight parameters distribution 1 2 Safe paralleling 1 L

 6.3. Size:1573K  st
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STGWT40HP65FB

STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 High speed switching series 3 Minimized tail current 2 1 Very low saturation voltage VCE(sat) = 1.6 V TAB TO-3PF (typ.) @ IC = 40 A Tight parameters distribution

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