STGWT40HP65FB Datasheet. Specs and Replacement

Type Designator: STGWT40HP65FB  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 283 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

Coesⓘ - Output Capacitance, typ: 198 pF

Package: TO3P

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STGWT40HP65FB datasheet

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STGWT40HP65FB

STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB Maximum junction temperature T = 175 C J Minimized tail current V = 1.6 V (typ.) @ I = 40 A CE(sat) C Tight parameter distribution Co-packed diode for protection 3 Safe paralleling 2 1 Low thermal resistance TO-3P Applica... See More ⇒

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STGWT40HP65FB

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STGWT40HP65FB

STGW40H60DLFB, STGWT40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A 3 2 3 Tight parameters distribution 1 2 Safe paralleling 1 L... See More ⇒

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STGWT40HP65FB

STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 High speed switching series 3 Minimized tail current 2 1 Very low saturation voltage VCE(sat) = 1.6 V TAB TO-3PF (typ.) @ IC = 40 A Tight parameters distribution ... See More ⇒

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Specs: IXGX72N60B3H1, IXGX72N60C3H1, IXGX75N250, IXGX82N120A3, IXGX82N120B3, IXGY2N120, IXLF19N250A, IXRA15N120, FGH40N60SFD, IXRH40N120, IXRP15N120, IXSA10N60B2D1, IXSA15N120B, IXSA20N60B2D1, IXSH10N60B2D1, IXSH15N120BD1, IXSH20N60B2D1

Keywords - STGWT40HP65FB transistor spec

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