STGWT40HP65FB Specs and Replacement
Type Designator: STGWT40HP65FB
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 283 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Coesⓘ - Output Capacitance, typ: 198 pF
Package: TO3P
STGWT40HP65FB Substitution - IGBT ⓘ Cross-Reference Search
STGWT40HP65FB datasheet
stgwt40hp65fb.pdf
STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB Maximum junction temperature T = 175 C J Minimized tail current V = 1.6 V (typ.) @ I = 40 A CE(sat) C Tight parameter distribution Co-packed diode for protection 3 Safe paralleling 2 1 Low thermal resistance TO-3P Applica... See More ⇒
stgwt40h60dlfb.pdf
STGW40H60DLFB, STGWT40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A 3 2 3 Tight parameters distribution 1 2 Safe paralleling 1 L... See More ⇒
stgwt40h65fb.pdf
STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 High speed switching series 3 Minimized tail current 2 1 Very low saturation voltage VCE(sat) = 1.6 V TAB TO-3PF (typ.) @ IC = 40 A Tight parameters distribution ... See More ⇒
Specs: IXGX72N60B3H1 , IXGX72N60C3H1 , IXGX75N250 , IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , IXRA15N120 , FGD4536 , IXRH40N120 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , IXSA20N60B2D1 , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 .
Keywords - STGWT40HP65FB transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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