IXSH10N60B2D1 Datasheet. Equivalente

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 ixsh10n60b2d1 ixsq10n60b2d1.pdf

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G (TAB) C E IC25 TC = 25 C20 A IC110 TC = 110

 ..2. Size:513K  ixys
 ixsh10n60b2d1.pdf

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V G (TAB) C E IC25 TC = 25 C20 A IC110 TC = 110

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 ixsh10n120au1.pdf

IXSH10N120AU1 PRELIMINARY DATA SHEET IC25 = 20 A IGBT with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 4.0 V C Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V E VGES Continuous 20 V VGEM Transient 30 V TO-247AD IC25 TC = 25 C 20 A IC90 TC = 90 C 10 A ICM TC = 25 C, 1 ms 40

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 ixsh10n120a.pdf

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 ixsh15n120b ixst15n120b.pdf

IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2

 9.2. Size:53K  ixys
 ixsh15n120b.pdf

IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2

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 ixsh15n120bd1.pdf

IXSH 15N120BD1 HIGH Voltage IGBT IC25 = 30 A IXST 15N120BD1 with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C30 A TO-268 (

 9.4. Size:35K  ixys
 ixsh16n60u1.pdf

IXSH 16N60U1 VCES = 600V Low VCE(sat) IGBT IC25 = 16A with Diode VCE(sat)typ = 1.8V Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C32 A IC90 TC = 90 C16 A G = Gate, C = Collecto

 9.5. Size:39K  ixys
 ixsh15n120au1.pdf

IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A "S" Series - Improved SCSOA Capability VCES = 1200 V C VCE(sat) = 4.0 V G E Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C VGES Continuous 20 V G E VGEM Transient 30 V IC25 TC = 25 C 30 A Features IC90 TC = 90 C 15 A

 9.6. Size:56K  ixys
 ixsh15n120bd1 ixst15n120bd1.pdf

IXSH 15N120BD1 HIGH Voltage IGBT IC25 = 30 A IXST 15N120BD1 with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C30 A TO-268 (