Справочник IGBT. IXSH10N60B2D1

 

IXSH10N60B2D1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXSH10N60B2D1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5(max) V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 50 pF
   Qgⓘ - Общий заряд затвора, typ: 17 nC
   Тип корпуса: TO247

 Аналог (замена) для IXSH10N60B2D1

 

 

IXSH10N60B2D1 Datasheet (PDF)

 ..1. Size:610K  ixys
 ixsh10n60b2d1 ixsq10n60b2d1.pdf

IXSH10N60B2D1 IXSH10N60B2D1

High Speed IGBT IXSH 10N60B2D1VCES = 600 VIXSQ 10N60B2D1with Diode IC25 = 20 AShort Circuit SOA Capability VCE(sat) = 2.5 VPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VG(TAB)CEIC25 TC = 25C20 AIC110 TC = 110

 ..2. Size:513K  ixys
 ixsh10n60b2d1.pdf

IXSH10N60B2D1 IXSH10N60B2D1

High Speed IGBT IXSH 10N60B2D1VCES = 600 VIXSQ 10N60B2D1with Diode IC25 = 20 AShort Circuit SOA Capability VCE(sat) = 2.5 VPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VG(TAB)CEIC25 TC = 25C20 AIC110 TC = 110

 7.1. Size:41K  ixys
 ixsh10n120au1.pdf

IXSH10N60B2D1 IXSH10N60B2D1

IXSH10N120AU1PRELIMINARY DATA SHEETIC25 = 20 AIGBT with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 4.0 VCSymbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VEVGES Continuous 20 VVGEM Transient 30 VTO-247ADIC25 TC = 25C 20 AIC90 TC = 90C 10 AICM TC = 25C, 1 ms 40

 7.2. Size:128K  ixys
 ixsh10n120a.pdf

IXSH10N60B2D1 IXSH10N60B2D1

 9.1. Size:54K  ixys
 ixsh15n120b ixst15n120b.pdf

IXSH10N60B2D1 IXSH10N60B2D1

IXSH 15N120BHIGH Voltage IGBTIC25 = 30 AIXST 15N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C30 AIC90 TC = 90C15 ATO-2

 9.2. Size:53K  ixys
 ixsh15n120b.pdf

IXSH10N60B2D1 IXSH10N60B2D1

IXSH 15N120BHIGH Voltage IGBTIC25 = 30 AIXST 15N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C30 AIC90 TC = 90C15 ATO-2

 9.3. Size:55K  ixys
 ixsh15n120bd1.pdf

IXSH10N60B2D1 IXSH10N60B2D1

IXSH 15N120BD1HIGH Voltage IGBTIC25 = 30 AIXST 15N120BD1with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C30 ATO-268 (

 9.4. Size:35K  ixys
 ixsh16n60u1.pdf

IXSH10N60B2D1 IXSH10N60B2D1

IXSH 16N60U1VCES = 600VLow VCE(sat) IGBTIC25 = 16Awith DiodeVCE(sat)typ = 1.8VShort Circuit SOA CapabilityPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)GVGEM Transient 30 VCEIC25 TC = 25C32 AIC90 TC = 90C16 AG = Gate, C = Collecto

 9.5. Size:39K  ixys
 ixsh15n120au1.pdf

IXSH10N60B2D1 IXSH10N60B2D1

IXSH15N120AU1PRELIMINARY DATA SHEETIGBT with DiodeIC25 = 30 A"S" Series - Improved SCSOA CapabilityVCES = 1200 VCVCE(sat) = 4.0 VGESymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VCVGES Continuous 20 VGEVGEM Transient 30 VIC25 TC = 25C 30 AFeaturesIC90 TC = 90C 15 A

 9.6. Size:56K  ixys
 ixsh15n120bd1 ixst15n120bd1.pdf

IXSH10N60B2D1 IXSH10N60B2D1

IXSH 15N120BD1HIGH Voltage IGBTIC25 = 30 AIXST 15N120BD1with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C30 ATO-268 (

Другие IGBT... IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 , IXSA10N60B2D1 , IXSA15N120B , IXSA20N60B2D1 , IXGH60N60 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A , IXSH45N120B .

 

 
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