IXSH20N60B2D1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXSH20N60B2D1 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 190 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 110 pF
Encapsulados: TO247
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IXSH20N60B2D1 datasheet
..1. Size:590K ixys
ixsh20n60b2d1.pdf 
IXSH 20N60B2D1 VCES = 600 V High Speed IGBT IC25 = 35 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C35 A G = Gate C = Collector IC110 TC = 110 C20 A E
5.1. Size:82K ixys
ixsh20n60u1.pdf
Not for new designs VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXSH 20 N60U1 600 V 40 A 2.5 V High Speed IGBT with Diode IXSH 20 N60AU1 600 V 40 A 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC
5.2. Size:82K ixys
ixsh20n60au1.pdf
Not for new designs VCES IC25 VCE(sat) Low VCE(sat) IGBT with Diode IXSH 20 N60U1 600 V 40 A 2.5 V High Speed IGBT with Diode IXSH 20 N60AU1 600 V 40 A 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC
9.1. Size:100K ixys
ixsh24n60bd1.pdf
IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC
9.2. Size:111K ixys
ixsh24n60 a.pdf
Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G TAB C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 48 A E = Em
9.3. Size:37K ixys
ixsh24n60u1 ixsh24n60au1.pdf
HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C48 A E = Emitter, TAB
9.5. Size:100K ixys
ixsh24n60b.pdf
IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC
9.6. Size:110K ixys
ixsh24n60a.pdf
Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G TAB C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 48 A E = Em
9.7. Size:36K ixys
ixsh24n60u1.pdf
HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C48 A E = Emitter, TAB
9.8. Size:36K ixys
ixsh24n60au1.pdf
HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C48 A E = Emitter, TAB
9.9. Size:110K ixys
ixsh24n60.pdf
Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G TAB C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 48 A E = Em
9.10. Size:31K ixys
ixsh25n120a.pdf
IXSH25N120A IC25 = 50 A IGBT Improved SCSOA Capability VCES = 1200 V VCE(sat) = 4.0 V Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25 C 50 A E IC90 TC = 90 C 25 A ICM TC = 25 C, 1 ms 80 A SSOA VGE = 15 V, TJ = 125 C, RG = 33 W ICM = 50 A
9.11. Size:34K ixys
ixsh25n120au1.pdf
IXSH25N120AU1 IGBT with Diode IC25 = 50 A "S" Series - Improved SCSOA Capability VCES = 1200 V VCE(sat) = 4.0 V C G E Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V VGEM Transient 30 V G E C IC25 TC = 25 C 50 A IC90 TC = 90 C 25 A ICM TC = 25 C, 1 ms 80 A Features SSOA
9.12. Size:102K ixys
ixsh24n60b ixsh24n60bd1 ixst24n60b ixst24n60bd1.pdf
IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC
Otros transistores... STGWT40HP65FB, IXRH40N120, IXRP15N120, IXSA10N60B2D1, IXSA15N120B, IXSA20N60B2D1, IXSH10N60B2D1, IXSH15N120BD1, RJP30H2A, IXSH24N60B, IXSH24N60BD1, IXSH30N60B2D1, IXSH35N120B, SIG20N60P1A, IXSH45N120B, IXSK35N120BD1, IXSK80N60B
