IXSH20N60B2D1
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IXSH20N60B2D1
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 190
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
35
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
2.5(max)
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 6.5
V
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 30
nS
Coesⓘ - Выходная емкость, типовая: 110
pF
Qgⓘ - Общий заряд затвора, typ: 33
nC
Тип корпуса:
TO247
Аналог (замена) для IXSH20N60B2D1
IXSH20N60B2D1
Datasheet (PDF)
..1. Size:590K ixys
ixsh20n60b2d1.pdf 
IXSH 20N60B2D1VCES = 600 VHigh Speed IGBTIC25 = 35 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C35 AG = Gate C = CollectorIC110 TC = 110C20 AE
5.1. Size:82K ixys
ixsh20n60u1.pdf 
Not for new designs VCES IC25 VCE(sat)Low VCE(sat) IGBT with Diode IXSH 20 N60U1 600 V 40 A 2.5 VHigh Speed IGBT with Diode IXSH 20 N60AU1 600 V 40 A 3.0 VCombi PacksShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC
5.2. Size:82K ixys
ixsh20n60au1.pdf 
Not for new designs VCES IC25 VCE(sat)Low VCE(sat) IGBT with Diode IXSH 20 N60U1 600 V 40 A 2.5 VHigh Speed IGBT with Diode IXSH 20 N60AU1 600 V 40 A 3.0 VCombi PacksShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC
9.1. Size:100K ixys
ixsh24n60bd1.pdf 
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
9.2. Size:111K ixys
ixsh24n60 a.pdf 
Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em
9.3. Size:37K ixys
ixsh24n60u1 ixsh24n60au1.pdf 
HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat)IXSH 24N60U1 600 V 48 A 2.2 VShort Circuit SOA CapabilityIXSH 24N60AU1 600 V 48 A 2.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEG = Gate, C = Collector,IC25 TC = 25C48 AE = Emitter, TAB
9.5. Size:100K ixys
ixsh24n60b.pdf 
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
9.6. Size:110K ixys
ixsh24n60a.pdf 
Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em
9.7. Size:36K ixys
ixsh24n60u1.pdf 
HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat)IXSH 24N60U1 600 V 48 A 2.2 VShort Circuit SOA CapabilityIXSH 24N60AU1 600 V 48 A 2.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEG = Gate, C = Collector,IC25 TC = 25C48 AE = Emitter, TAB
9.8. Size:36K ixys
ixsh24n60au1.pdf 
HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat)IXSH 24N60U1 600 V 48 A 2.2 VShort Circuit SOA CapabilityIXSH 24N60AU1 600 V 48 A 2.7 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEG = Gate, C = Collector,IC25 TC = 25C48 AE = Emitter, TAB
9.9. Size:110K ixys
ixsh24n60.pdf 
Advance Technical InformationVCES IC90 VCE(sat)HiPerFASTTM IGBTIXSH24N60 600V 24A 2.2VShort Circuit SOA Capability600V 24A 2.7VIXSH24N60ATO-247 (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGTABCVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 48 AE = Em
9.10. Size:31K ixys
ixsh25n120a.pdf 
IXSH25N120AIC25 = 50 AIGBTImproved SCSOA Capability VCES = 1200 VVCE(sat) = 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25C 50 A EIC90 TC = 90C 25 AICM TC = 25C, 1 ms 80 ASSOA VGE = 15 V, TJ = 125C, RG = 33 W ICM = 50 A
9.11. Size:34K ixys
ixsh25n120au1.pdf 
IXSH25N120AU1IGBT with Diode IC25 = 50 A"S" Series - Improved SCSOA CapabilityVCES = 1200 VVCE(sat) = 4.0 VCGESymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VVGEM Transient 30 VGECIC25 TC = 25C 50 AIC90 TC = 90C 25 AICM TC = 25C, 1 ms 80 AFeaturesSSOA
9.12. Size:102K ixys
ixsh24n60b ixsh24n60bd1 ixst24n60b ixst24n60bd1.pdf 
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
Другие IGBT... STGWT40HP65FB
, IXRH40N120
, IXRP15N120
, IXSA10N60B2D1
, IXSA15N120B
, IXSA20N60B2D1
, IXSH10N60B2D1
, IXSH15N120BD1
, RJP30H1DPD
, IXSH24N60B
, IXSH24N60BD1
, IXSH30N60B2D1
, IXSH35N120B
, SIG20N60P1A
, IXSH45N120B
, IXSK35N120BD1
, IXSK80N60B
.
