IXSH35N120B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXSH35N120B  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 300 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.6(max) V @25℃

trⓘ - Tiempo de subida, typ: 27 nS

Coesⓘ - Capacitancia de salida, typ: 260 pF

Encapsulados: TO247

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IXSH35N120B datasheet

 ..1. Size:80K  ixys
 ixsh35n120b.pdf pdf_icon

IXSH35N120B

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1

 ..2. Size:82K  ixys
 ixsh35n120b ixst35n120b.pdf pdf_icon

IXSH35N120B

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1

 4.1. Size:63K  ixys
 ixsh35n120a.pdf pdf_icon

IXSH35N120B

High Voltage, IXSH 35N120A VCES = 1200 V High speed IGBT IC25 = 70 A VCE(sat) = 4 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A G = Gate, C = Collector, IC90 TC = 90 C35 A E = Emitter, TAB = Collect

 6.1. Size:144K  ixys
 ixsh35n140a.pdf pdf_icon

IXSH35N120B

VCES = 1400V High Voltage IXSH35N140A IC90 = 35A High speed IGBT VCE(sat) 4.0V Short Circuit SOA Capability tfi(typ) = 200ns TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1400 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1400 V C E Tab VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 70 A E = Emi

MOSTRAR MÁS

Otros transistores... IXSA15N120B, IXSA20N60B2D1, IXSH10N60B2D1, IXSH15N120BD1, IXSH20N60B2D1, IXSH24N60B, IXSH24N60BD1, IXSH30N60B2D1, YGW40N65F1, SIG20N60P1A, IXSH45N120B, IXSK35N120BD1, IXSK80N60B, IXSN80N60BD1, IXSP10N60B2D1, IXSP15N120B, IXSP20N60B2