IXSH35N120B Datasheet. Specs and Replacement

Type Designator: IXSH35N120B  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6(max) V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 260 pF

Package: TO247

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IXSH35N120B datasheet

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IXSH35N120B

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1 ... See More ⇒

 ..2. Size:82K  ixys
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IXSH35N120B

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A TO-268 ( IXST) IC90 TC = 90 C35 A ICM TC = 25 C, 1 ... See More ⇒

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IXSH35N120B

High Voltage, IXSH 35N120A VCES = 1200 V High speed IGBT IC25 = 70 A VCE(sat) = 4 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C70 A G = Gate, C = Collector, IC90 TC = 90 C35 A E = Emitter, TAB = Collect... See More ⇒

 6.1. Size:144K  ixys
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IXSH35N120B

VCES = 1400V High Voltage IXSH35N140A IC90 = 35A High speed IGBT VCE(sat) 4.0V Short Circuit SOA Capability tfi(typ) = 200ns TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1400 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1400 V C E Tab VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25 C 70 A E = Emi... See More ⇒

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Specs: IXSA15N120B, IXSA20N60B2D1, IXSH10N60B2D1, IXSH15N120BD1, IXSH20N60B2D1, IXSH24N60B, IXSH24N60BD1, IXSH30N60B2D1, YGW40N65F1, SIG20N60P1A, IXSH45N120B, IXSK35N120BD1, IXSK80N60B, IXSN80N60BD1, IXSP10N60B2D1, IXSP15N120B, IXSP20N60B2

Keywords - IXSH35N120B transistor spec

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