All IGBT. IXSH35N120B Datasheet

 

IXSH35N120B Datasheet and Replacement


   Type Designator: IXSH35N120B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.6(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 260 pF
   Qgⓘ - Total Gate Charge, typ: 120 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXSH35N120B Datasheet (PDF)

 ..1. Size:80K  ixys
 ixsh35n120b.pdf pdf_icon

IXSH35N120B

IXSH 35N120BIGBT IC25 = 70 AIXST 35N120BVCES = 1200 VVCE(sat) = 3.6 V"S" Series - Improved SCSOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 ATO-268 ( IXST)IC90 TC = 90C35 AICM TC = 25C, 1

 ..2. Size:82K  ixys
 ixsh35n120b ixst35n120b.pdf pdf_icon

IXSH35N120B

IXSH 35N120BIGBT IC25 = 70 AIXST 35N120BVCES = 1200 VVCE(sat) = 3.6 V"S" Series - Improved SCSOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 ATO-268 ( IXST)IC90 TC = 90C35 AICM TC = 25C, 1

 4.1. Size:63K  ixys
 ixsh35n120a.pdf pdf_icon

IXSH35N120B

High Voltage, IXSH 35N120A VCES = 1200 VHigh speed IGBT IC25 = 70 AVCE(sat) = 4 VShort Circuit SOA CapabilitySymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C70 AG = Gate, C = Collector,IC90 TC = 90C35 AE = Emitter, TAB = Collect

 6.1. Size:144K  ixys
 ixsh35n140a.pdf pdf_icon

IXSH35N120B

VCES = 1400VHigh Voltage IXSH35N140AIC90 = 35AHigh speed IGBTVCE(sat) 4.0VShort Circuit SOA Capabilitytfi(typ) = 200nsTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1400 VGVCGR TJ = 25C to 150C, RGE = 1M 1400 VCE TabVGES Continuous 20 VVGEM Transient 30 VG = Gate C = CollectorIC25 TC = 25C 70 AE = Emi

SHOW MORE

Datasheet: IXSA15N120B , IXSA20N60B2D1 , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , RJP63F3DPP-M0 , SIG20N60P1A , IXSH45N120B , IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 .

History: AUIRG4PC40S-E | SIG25N60P | MGW20N120 | MWI30-12E6K | IXGR32N60CD1 | SGP06N60 | IGP03N120H2

Keywords - IXSH35N120B transistor datasheet

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