SIG20N60P1A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIG20N60P1A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 170 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 36 nS
Coesⓘ - Capacitancia de salida, typ: 93 pF
Paquete / Cubierta: TO220
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SIG20N60P1A Datasheet (PDF)
sig20n60p1a.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60P1ARev. 0.5Apr. 2023www.supersemi.com.cnSIG20N60P1A600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat)I
sig20n60f sig20n60p.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60*Rev. 0.3Aug.2021www.supersemi.com.cnSIG20N60F/SIG20N60P600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat
sig20n60f.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60FRev. 0.5Apr. 2023www.supersemi.com.cnSIG20N60F600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat)IC=20
ssig20n135h.pdf
SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100C Schema t ic d iagr am TO-247 Features and Benefits: Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co
Otros transistores... IXSA20N60B2D1 , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , IKW75N60T , IXSH45N120B , IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2