All IGBT. SIG20N60P1A Datasheet

 

SIG20N60P1A Datasheet and Replacement


   Type Designator: SIG20N60P1A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 170 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 93 pF
   Qg ⓘ - Total Gate Charge, typ: 23 nC
   Package: TO220
 

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SIG20N60P1A Datasheet (PDF)

 ..1. Size:1011K  cn super semi
 sig20n60p1a.pdf pdf_icon

SIG20N60P1A

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60P1ARev. 0.5Apr. 2023www.supersemi.com.cnSIG20N60P1A600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat)I

 5.1. Size:1068K  cn super semi
 sig20n60f sig20n60p.pdf pdf_icon

SIG20N60P1A

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60*Rev. 0.3Aug.2021www.supersemi.com.cnSIG20N60F/SIG20N60P600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat

 6.1. Size:971K  cn super semi
 sig20n60f.pdf pdf_icon

SIG20N60P1A

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSIG20N60FRev. 0.5Apr. 2023www.supersemi.com.cnSIG20N60F600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs, VCE 600 Vdesigned according to the superjunction (SJ) IC 20 Aprinciple. The SJ-IGBT series provides low VCE(sat)IC=20

 8.1. Size:614K  silikron
 ssig20n135h.pdf pdf_icon

SIG20N60P1A

SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100C Schema t ic d iagr am TO-247 Features and Benefits: Advanced Trench-FS Process Technology Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A Fast Switching High Input Impedance Pb- Free Product Power Switch Circuit of Induction Co

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Datasheet: IXSA20N60B2D1 , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , GT30F126 , IXSH45N120B , IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 .

Keywords - SIG20N60P1A transistor datasheet

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