IXSN80N60BD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXSN80N60BD1 Datasheet (PDF)

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IGBT with Diode IXSN 80N60BD1 VCES = 600 VShort Circuit SOA Capability IC25 = 160 AVCE(sat) = 2.5 Vtfi = 180 nsCGPreliminary Data SheetEESymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432EV TJ = 25C to 150C 600 VCESGV TJ = 25C to 150C; RGE = 1 M 600 ACGRV Continuous 20 VGESVGEM Transient 30 VEIC25 TC = 25C (Silicon chip

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IGBT with Diode IXSN 80N60AU1 VCES = 600 VIC25 = 160 AVCE(sat) = 3 VShort Circuit SOA CapabilityCGEESymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432EVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 AVGES Continuous 20 VVGEM Transient 30 VEIC25 TC = 25C 160 ACIC90 TC = 90C80 AE = Emitter , C = Collector

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VCES = 600 VHigh Current IGBTIXSN80N60AIC25 = 160 AVCE(sat) = 3 VShort Circuit SOA CapabilityGPreliminary DataEESymbol Test Conditions Maximum RatingsminiBLOC , SOT-227 B1VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 AVGES Continuous 20 VVGEM Transient 30 V 43IC25 TC = 25C 160 AIC90 TC = 90C80 A1 = Emitter 3 = Collec

Otros transistores... IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A , IXSH45N120B , IXSK35N120BD1 , IXSK80N60B , FGPF4633 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IXSR35N120BD1 .