IXSN80N60BD1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXSN80N60BD1 datasheet

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IGBT with Diode IXSN 80N60BD1 VCES = 600 V Short Circuit SOA Capability IC25 = 160 A VCE(sat) = 2.5 V tfi = 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 E V TJ = 25 C to 150 C 600 V CES G V TJ = 25 C to 150 C; RGE = 1 M 600 A CGR V Continuous 20 V GES VGEM Transient 30 V E IC25 TC = 25 C (Silicon chip

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IGBT with Diode IXSN 80N60AU1 VCES = 600 V IC25 = 160 A VCE(sat) = 3 V Short Circuit SOA Capability C G E E Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 160 A C IC90 TC = 90 C80 A E = Emitter , C = Collector

5.2. Size:75K ixys
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VCES = 600 V High Current IGBT IXSN80N60A IC25 = 160 A VCE(sat) = 3 V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings miniBLOC , SOT-227 B 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V 4 3 IC25 TC = 25 C 160 A IC90 TC = 90 C80 A 1 = Emitter 3 = Collec

Otros transistores... IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A , IXSH45N120B , IXSK35N120BD1 , IXSK80N60B , RJP63F3DPP-M0 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IXSR35N120BD1 .