IXSN80N60BD1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXSN80N60BD1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 420 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Coesⓘ - Capacitancia de salida, typ: 720 pF

Encapsulados: SOT227B

  📄📄 Copiar 

 Búsqueda de reemplazo de IXSN80N60BD1 IGBT

- Selecciónⓘ de transistores por parámetros

 

IXSN80N60BD1 datasheet

 ..1. Size:591K  ixys
ixsn80n60bd1.pdf pdf_icon

IXSN80N60BD1

IGBT with Diode IXSN 80N60BD1 VCES = 600 V Short Circuit SOA Capability IC25 = 160 A VCE(sat) = 2.5 V tfi = 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 E V TJ = 25 C to 150 C 600 V CES G V TJ = 25 C to 150 C; RGE = 1 M 600 A CGR V Continuous 20 V GES VGEM Transient 30 V E IC25 TC = 25 C (Silicon chip

 5.1. Size:96K  ixys
ixsn80n60au1.pdf pdf_icon

IXSN80N60BD1

IGBT with Diode IXSN 80N60AU1 VCES = 600 V IC25 = 160 A VCE(sat) = 3 V Short Circuit SOA Capability C G E E Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 160 A C IC90 TC = 90 C80 A E = Emitter , C = Collector

 5.2. Size:75K  ixys
ixsn80n60a.pdf pdf_icon

IXSN80N60BD1

VCES = 600 V High Current IGBT IXSN80N60A IC25 = 160 A VCE(sat) = 3 V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings miniBLOC , SOT-227 B 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V 4 3 IC25 TC = 25 C 160 A IC90 TC = 90 C80 A 1 = Emitter 3 = Collec

Otros transistores... IXSH24N60B, IXSH24N60BD1, IXSH30N60B2D1, IXSH35N120B, SIG20N60P1A, IXSH45N120B, IXSK35N120BD1, IXSK80N60B, RJP30H1DPD, IXSP10N60B2D1, IXSP15N120B, IXSP20N60B2, IXSP20N60B2D1, IXSP24N60B, IXSQ10N60B2D1, SIW120N65G2P2D, IXSR35N120BD1