IXSN80N60BD1 PDF and Equivalents Search

 

IXSN80N60BD1 Specs and Replacement

Type Designator: IXSN80N60BD1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 420 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 160 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 720 pF

Package: SOT227B

 IXSN80N60BD1 Substitution

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IXSN80N60BD1 datasheet

 ..1. Size:591K  ixys
 ixsn80n60bd1.pdf pdf_icon

IXSN80N60BD1

IGBT with Diode IXSN 80N60BD1 VCES = 600 V Short Circuit SOA Capability IC25 = 160 A VCE(sat) = 2.5 V tfi = 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 E V TJ = 25 C to 150 C 600 V CES G V TJ = 25 C to 150 C; RGE = 1 M 600 A CGR V Continuous 20 V GES VGEM Transient 30 V E IC25 TC = 25 C (Silicon chip ... See More ⇒

 5.1. Size:96K  ixys
 ixsn80n60au1.pdf pdf_icon

IXSN80N60BD1

IGBT with Diode IXSN 80N60AU1 VCES = 600 V IC25 = 160 A VCE(sat) = 3 V Short Circuit SOA Capability C G E E Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 160 A C IC90 TC = 90 C80 A E = Emitter , C = Collector ... See More ⇒

 5.2. Size:75K  ixys
 ixsn80n60a.pdf pdf_icon

IXSN80N60BD1

VCES = 600 V High Current IGBT IXSN80N60A IC25 = 160 A VCE(sat) = 3 V Short Circuit SOA Capability G Preliminary Data E E Symbol Test Conditions Maximum Ratings miniBLOC , SOT-227 B 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 A VGES Continuous 20 V VGEM Transient 30 V 4 3 IC25 TC = 25 C 160 A IC90 TC = 90 C80 A 1 = Emitter 3 = Collec... See More ⇒

Specs: IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A , IXSH45N120B , IXSK35N120BD1 , IXSK80N60B , RJP63F3DPP-M0 , IXSP10N60B2D1 , IXSP15N120B , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IXSR35N120BD1 .

History: IXSK80N60B | SNG40660

Keywords - IXSN80N60BD1 transistor spec

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