IXST45N120B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXST45N120B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 27 nS
Coesⓘ - Capacitancia de salida, typ: 240 pF
Paquete / Cubierta: TO268
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IXST45N120B Datasheet (PDF)
ixst45n120b.pdf
IXSH 45N120BHigh Voltage IGBT IC25 = 75 AIXST 45N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.0 VPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 75 ATO-26
ixsh45n120b ixst45n120b.pdf
IXSH 45N120BHigh Voltage IGBT IC25 = 75 AIXST 45N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.0 VPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 75 ATO-26
ixst40n60b.pdf
IXSH 40N60B VCES = 600VHigh Speed IGBTIXST 40N60B IC25 = 75AVCE(sat) = 2.2VShort Circuit SOA Capabilitytfi typ = 100 nsPreliminary dataTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C75 AIC90 TC
ixsh40n60b ixst40n60b.pdf
IXSH 40N60B VCES = 600VHigh Speed IGBTIXST 40N60B IC25 = 75AVCE(sat) = 2.2VShort Circuit SOA Capabilitytfi typ = 100 nsPreliminary dataTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C75 AIC90 TC
Otros transistores... IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , SGT50T65FD1PN , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2