IXST45N120B PDF and Equivalents Search

 

IXST45N120B Specs and Replacement

Type Designator: IXST45N120B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 240 pF

Package: TO268

 IXST45N120B Substitution

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IXST45N120B datasheet

 ..1. Size:53K  ixys
 ixst45n120b.pdf pdf_icon

IXST45N120B

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 75 A TO-26... See More ⇒

 ..2. Size:54K  ixys
 ixsh45n120b ixst45n120b.pdf pdf_icon

IXST45N120B

IXSH 45N120B High Voltage IGBT IC25 = 75 A IXST 45N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.0 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C (limited by leads) 75 A TO-26... See More ⇒

 9.1. Size:54K  ixys
 ixst40n60b.pdf pdf_icon

IXST45N120B

IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C75 A IC90 TC... See More ⇒

 9.2. Size:55K  ixys
 ixsh40n60b ixst40n60b.pdf pdf_icon

IXST45N120B

IXSH 40N60B VCES = 600V High Speed IGBT IXST 40N60B IC25 = 75A VCE(sat) = 2.2V Short Circuit SOA Capability tfi typ = 100 ns Preliminary data TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C75 A IC90 TC... See More ⇒

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Specs: IXSR40N60BD1 , IXSR40N60CD1 , IXST15N120BD1 , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IRGP4086 , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 .

History: SPF15N65T1T1TL | ISL9V5036S3S

Keywords - IXST45N120B transistor spec

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