IXXH30N60C3D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXXH30N60C3D1 datasheet

..1. Size:190K ixys
ixxh30n60c3d1.pdf pdf_icon

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60C3D1 GenX3TM w/ Diode IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM

3.1. Size:214K ixys
ixxh30n60c3.pdf pdf_icon

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60C3 GenX3TM IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Cont

5.1. Size:170K ixys
ixxh30n60b3.pdf pdf_icon

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60B3 GenX3TM IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient

5.2. Size:189K ixys
ixxh30n60b3d1.pdf pdf_icon

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60B3D1 GenX3TM w/ Diode IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM

Otros transistores... IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , CRG40T60AK3HD , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 , IXXH75N60C3 , IXXH75N60C3D1 .