IXXH30N60C3D1 Datasheet and Replacement, IGBT Equivalent Finder, Cross Reference. AllTransistors.com

IXXH30N60C3D1 Datasheet (PDF)

..1. Size:190K ixys
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Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

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Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3GenX3TM IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Cont

5.1. Size:170K ixys
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Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3GenX3TM IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient

5.2. Size:189K ixys
ixxh30n60b3d1.pdf pdf_icon

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

Datasheet: IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , NGD8201N , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 , IXXH75N60C3 , IXXH75N60C3D1 .