IXXH50N60B3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXXH50N60B3 datasheet

..1. Size:224K ixys
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Preliminary Technical Information VCES = 600V 600V XPTTM IGBTs IXXA50N60B3 IC110 = 50A GenX3TM IXXP50N60B3 VCE(sat) 1.80V IXXH50N60B3 TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VG

0.1. Size:192K ixys
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Advance Technical Information VCES = 600V XPTTM IGBT 600V IXXH50N60B3D1 IC110 = 50A GenX3TM w/ Diode VCE(sat) 1.80V tfi(typ) = 135ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGE

5.1. Size:174K ixys
ixxh50n60c3.pdf pdf_icon

Advance Technical Information VCES = 600V XPTTM 600V IXXH50N60C3 IC110 = 50A GenX3TM VCE(sat) 2.30V tfi(typ) = 42ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30

5.2. Size:193K ixys
ixxh50n60c3d1.pdf pdf_icon

Advance Technical Information VCES = 600V XPTTM 600V IXXH50N60C3D1 IC110 = 50A GenX3TM w/ Diode VCE(sat) 2.30V tfi(typ) = 42ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V G VCGR TJ = 25 C to 175 C, RGE = 1M 600 V C Tab E VGES Continuous 20 V VGEM Tra

Otros transistores... IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 , SGP30N60 , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 , IXXH75N60C3 , IXXH75N60C3D1 , IXXK100N60B3H1 .