All IGBT. IXXH50N60B3 Datasheet

 

IXXH50N60B3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXXH50N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 195 pF
   Qgⓘ - Total Gate Charge, typ: 70 nC
   Package: TO247

 IXXH50N60B3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXXH50N60B3 Datasheet (PDF)

 ..1. Size:224K  ixys
 ixxh50n60b3.pdf

IXXH50N60B3 IXXH50N60B3

Preliminary Technical InformationVCES = 600V600V XPTTM IGBTs IXXA50N60B3IC110 = 50AGenX3TM IXXP50N60B3 VCE(sat) 1.80V IXXH50N60B3TO-263 AA (IXXA)Extreme Light Punch ThroughIGBT for 5-30 kHz SwitchingGEC (Tab)TO-220AB (IXXP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VVG

 0.1. Size:192K  ixys
 ixxh50n60b3d1.pdf

IXXH50N60B3 IXXH50N60B3

Advance Technical InformationVCES = 600VXPTTM IGBT 600V IXXH50N60B3D1IC110 = 50AGenX3TM w/ Diode VCE(sat) 1.80V tfi(typ) = 135nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGE

 5.1. Size:174K  ixys
 ixxh50n60c3.pdf

IXXH50N60B3 IXXH50N60B3

Advance Technical InformationVCES = 600VXPTTM 600V IXXH50N60C3IC110 = 50AGenX3TM VCE(sat) 2.30V tfi(typ) = 42nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient 30

 5.2. Size:193K  ixys
 ixxh50n60c3d1.pdf

IXXH50N60B3 IXXH50N60B3

Advance Technical InformationVCES = 600VXPTTM 600V IXXH50N60C3D1IC110 = 50AGenX3TM w/ Diode VCE(sat) 2.30V tfi(typ) = 42nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VGVCGR TJ = 25C to 175C, RGE = 1M 600 VC TabEVGES Continuous 20 VVGEM Tra

Datasheet: IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 , TGD30N40P , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 , IXXH75N60C3 , IXXH75N60C3D1 , IXXK100N60B3H1 .

 

 
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