MSG100N350FH Todos los transistores

 

MSG100N350FH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSG100N350FH
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 162 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 330 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 54 nS
   Coesⓘ - Capacitancia de salida, typ: 105 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

MSG100N350FH Datasheet (PDF)

 ..1. Size:2543K  cn maspower
msg100n350fh.pdf pdf_icon

MSG100N350FH

MSG100N350FHFeatures High Speed switching Low Saturation Voltage:VCE(sat) = 2.2V @ IC = 100 A Built-in Fast Recovery diode RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Colle

 8.1. Size:5469K  cn maspower
msg100d350fh msg100d350fhs.pdf pdf_icon

MSG100N350FH

MSG100D350FH/FHSFeatures Low gate charge Trench FS Technology Saturation voltage:Vce(sat),typ=2.0,Ic=100Aand Tc=25 RoHS ProductApplications UPS General purpose invertersAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100

 8.2. Size:8778K  cn maspower
msg100t120fqw.pdf pdf_icon

MSG100N350FH

MSG100T120FQWFeatures High efficiency in hard switchingAnd resonant topologies 10sec short circuit withstandTime at Tvj=175C Low Gate Charge QG Very soft,fast recovery fullCurrent anti-parallel diode Maximum junction temperatureT =175CvjmaxApplications UPS Charger Energy Storage Three-level Solar String InverterAbsolute Ratings(

 8.3. Size:6893K  cn maspower
msg100t100fln msg100t100fqw.pdf pdf_icon

MSG100N350FH

MSG100T100FLN/QWFeature Low gate charge Trench FS Technology, saturation voltage: V (sat), typ=1.85V@ Ic=CE100A and TC=25 ROHS productApplications UPS Solar inverterMaximum RatingsParameter Symbol Rating UnitCollector-emitter voltage V 1000 VCETc=25 200 A*DC collector current, limited by T Ivjmax CTc=100 100 APulsed collector curr

Otros transistores... DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , IXRH40N120 , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U .

History: MMG100WD120XB6T4N | 2MBI150VA-120-50 | XD040Q120AT1S3 | MG200Q2YS50 | APTGT100A120D1 | SKM50GAL12T4 | 2MBI150PC-140

 

 
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