MSG100N350FH IGBT. Datasheet pdf. Equivalent
Type Designator: MSG100N350FH
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 162 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 54 nS
Coesⓘ - Output Capacitance, typ: 105 pF
Qgⓘ - Total Gate Charge, typ: 80 nC
Package: TO247
MSG100N350FH Transistor Equivalent Substitute - IGBT Cross-Reference Search
MSG100N350FH Datasheet (PDF)
msg100n350fh.pdf
MSG100N350FHFeatures High Speed switching Low Saturation Voltage:VCE(sat) = 2.2V @ IC = 100 A Built-in Fast Recovery diode RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Colle
msg100d350fh msg100d350fhs.pdf
MSG100D350FH/FHSFeatures Low gate charge Trench FS Technology Saturation voltage:Vce(sat),typ=2.0,Ic=100Aand Tc=25 RoHS ProductApplications UPS General purpose invertersAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100
msg100t120fqw.pdf
MSG100T120FQWFeatures High efficiency in hard switchingAnd resonant topologies 10sec short circuit withstandTime at Tvj=175C Low Gate Charge QG Very soft,fast recovery fullCurrent anti-parallel diode Maximum junction temperatureT =175CvjmaxApplications UPS Charger Energy Storage Three-level Solar String InverterAbsolute Ratings(
msg100t100fln msg100t100fqw.pdf
MSG100T100FLN/QWFeature Low gate charge Trench FS Technology, saturation voltage: V (sat), typ=1.85V@ Ic=CE100A and TC=25 ROHS productApplications UPS Solar inverterMaximum RatingsParameter Symbol Rating UnitCollector-emitter voltage V 1000 VCETc=25 200 A*DC collector current, limited by T Ivjmax CTc=100 100 APulsed collector curr
msg100t65hlb3 msg100t65hlc1.pdf
MSG100T65HLB3/C1Features Very Low Saturation Voltage:VCE(sat) = 1.65V @ IC = 100 A Maximum Junction Temperature: TJ = 175C Positive Temperature Co-Efficient Tight Parameter Distribution High Input ImpedanceApplications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Other Power-Train ApplicationsRequiring High Power Swit
Datasheet: DG40F12T2 , DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , TGPF30N40P , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U .
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