All IGBT. G8P50G Datasheet


G8P50G IGBT. Datasheet pdf. Equivalent

Type Designator: G8P50G

Type of IGBT Channel: P-Channel

Maximum Power Dissipation (Pc), W: 66

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 3

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 45

Package: TO252AA

G8P50G Transistor Equivalent Substitute - IGBT Cross-Reference Search


G8P50G Datasheet (PDF)

9.1. irg8p50n120kd.pdf Size:615K _international_rectifier


IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 50A, TC =100C tSC 10s, TJ(max) = 150C C E G E G C G EVCE(ON) typ. = 1.7V @ IC = 35A IRG8P50N120KDPbFIRG8P50N120KDEPbFn-channelTO247ACApplications TO247ADG C E Industrial Motor Drive Gate Collector Em

Datasheet: G40N60B3 , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , FGH40N60UFD , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U .


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