GA100TS120U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GA100TS120U
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 520 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 141 nS
Coesⓘ - Capacitancia de salida, typ: 830 pF
Qgⓘ - Carga total de la puerta, typ: 830 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de GA100TS120U - IGBT
GA100TS120U Datasheet (PDF)
ga100ts120u.pdf
PD - 50060BGA100TS120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.4V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 100A HEXFRED antiparallel diodes with ultra- soft
vs-ga100ts120upbf.pdf
VS-GA100TS120UPbFwww.vishay.comVishay Semiconductors INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 100 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard
ga100ts120.pdf
PD - 5.060GA100TS120UPRELIMINARY Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.4V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 100A HEXFRED antiparallel diodes with
ga100ts1.pdf
GA100TS120UPbFVishay High Power Products"Half-Bridge" IGBT INT-A-PAK(Ultrafast Speed IGBT), 100 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL
Otros transistores... DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , IRG4PF50W , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U .
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