GA100TS120U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GA100TS120U Datasheet (PDF)

..1. Size:269K international rectifier
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PD - 50060BGA100TS120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.4V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 100A HEXFRED antiparallel diodes with ultra- soft

0.1. Size:258K vishay
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VS-GA100TS120UPbFwww.vishay.comVishay Semiconductors INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 100 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard

4.1. Size:170K international rectifier
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PD - 5.060GA100TS120UPRELIMINARY Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.4V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 100A HEXFRED antiparallel diodes with

6.1. Size:290K vishay
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GA100TS120UPbFVishay High Power Products"Half-Bridge" IGBT INT-A-PAK(Ultrafast Speed IGBT), 100 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL

Otros transistores... DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , XNF15N60T , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U .