All IGBT. GA100TS120U Datasheet

 

GA100TS120U IGBT. Datasheet pdf. Equivalent


   Type Designator: GA100TS120U
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 520 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 141 nS
   Coesⓘ - Output Capacitance, typ: 830 pF
   Qgⓘ - Total Gate Charge, typ: 830 nC
   Package: MODULE

 GA100TS120U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GA100TS120U Datasheet (PDF)

 ..1. Size:269K  international rectifier
 ga100ts120u.pdf

GA100TS120U GA100TS120U

PD - 50060BGA100TS120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.4V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 100A HEXFRED antiparallel diodes with ultra- soft

 0.1. Size:258K  vishay
 vs-ga100ts120upbf.pdf

GA100TS120U GA100TS120U

VS-GA100TS120UPbFwww.vishay.comVishay Semiconductors INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 100 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard

 4.1. Size:170K  international rectifier
 ga100ts120.pdf

GA100TS120U GA100TS120U

PD - 5.060GA100TS120UPRELIMINARY Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.4V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 100A HEXFRED antiparallel diodes with

 6.1. Size:290K  vishay
 ga100ts1.pdf

GA100TS120U GA100TS120U

GA100TS120UPbFVishay High Power Products"Half-Bridge" IGBT INT-A-PAK(Ultrafast Speed IGBT), 100 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL

Datasheet: DG40H12T2Y , DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , IRG4PF50W , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U .

 

 
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