GA100TS120U PDF and Equivalents Search

 

GA100TS120U Specs and Replacement

Type Designator: GA100TS120U

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 520 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃

tr ⓘ - Rise Time, typ: 141 nS

Coesⓘ - Output Capacitance, typ: 830 pF

Package: MODULE

 GA100TS120U Substitution

- IGBT ⓘ Cross-Reference Search

 

GA100TS120U datasheet

 ..1. Size:269K  international rectifier
 ga100ts120u.pdf pdf_icon

GA100TS120U

PD - 50060B GA100TS120U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features VCES = 1200V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 2.4V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 100A HEXFRED antiparallel diodes with ultra- soft ... See More ⇒

 0.1. Size:258K  vishay
 vs-ga100ts120upbf.pdf pdf_icon

GA100TS120U

VS-GA100TS120UPbF www.vishay.com Vishay Semiconductors INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 100 A FEATURES Generation 4 IGBT technology Ultrafast Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard ... See More ⇒

 4.1. Size:170K  international rectifier
 ga100ts120.pdf pdf_icon

GA100TS120U

PD - 5.060 GA100TS120U PRELIMINARY Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features VCES = 1200V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 2.4V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 100A HEXFRED antiparallel diodes with ... See More ⇒

 6.1. Size:290K  vishay
 ga100ts1.pdf pdf_icon

GA100TS120U

GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A FEATURES Generation 4 IGBT technology Ultrafast Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL ... See More ⇒

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Specs: DG40H12T2Y, DG50H12T2Z, DG50X07T2, DG75H12T2, DG75X07T2L, DG75X12T2, MSG100D350FHS, MSG100N350FH, FGL60N100BNTD, GA100TS60U, GA125TS120U, GA150TD120U, GA150TS60U, GA200SA60S, GA200SA60U, GA200TD120U, GA250TD120U

Keywords - GA100TS120U transistor spec

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