MIEB101H1200EH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MIEB101H1200EH
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 630 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 183 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Qgⓘ - Carga total de la puerta, typ: 750 nC
Paquete / Cubierta: MODULE
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MIEB101H1200EH Datasheet (PDF)
mieb101h1200eh.pdf
MIEB 101H1200EHIGBT Module VCES = 1200 VIC25 = 183 AH BridgeVCE(sat) = 1.8 VPart name (Marking on product)MIEB101H1200EH13, 21D1 D2T1T21 92 1019E7287315D3D4T3 T43 114 1214, 20Features: Application: Package: SPT+ IGBT technology AC motor drives "E3-Pack" standard outline low saturation voltage Solar inverter Insulated copper b
mieb101w1200dpfeh.pdf
MIEB 101W1200DPFEHSix-Pack VCES = 1200 VIC25 = 170 ASPT+ IGBTVCE(sat) typ. = 1.9 VPreliminary dataPart name (Marking on product)MIEB101W1200DPFEH13, 211 5 92 6 10191715E 728733 7 118 12414, 20Features: Application: Package: SPT+ IGBT technology AC motor control designed for wave soldering low saturation voltage AC servo and robot drive
mieb101w1200eh.pdf
MIEB 101W1200EHSix-Pack VCES = 1200 VIC25 = 183 ASPT+ IGBTVCE(sat) = 1.8 VPart name (Marking on product)MIEB101W1200EH13, 21D1 D2 D3T1 T2 T31 5 92 6 101917E7287315D4 D5 D6T4 T5 T63 7 118 12414, 20Features: Application: Package: SPT+ IGBT technology AC motor drives "E3-Pack" standard outline low saturation voltage Solar inverter
mieb100w1200dpfteh.pdf
MIEB 100W1200DPFTEHSix-Pack VCES = 1200 VIC25 = 170 ASPT+ IGBTVCE(sat) typ. = 1.9 VPreliminary dataPart name (Marking on product)MIEB100W1200DPFTEH16, 17, 1830, 31, 32D1 D3 D5T1 T3 T55 91196 10227 24 2128 25 22NTC29 26 23E 72873D2 D4 D620T2 T4 T637 114 81233, 34, 35 13, 14, 15Features: Application: Package: SPT+ IGBT technology
mieb100w1200teh.pdf
MIEB100W1200TEHSix-Pack VCES = 1200 VIC25 = 183 ASPT+ IGBTVCE(sat) = 1.8 VPart name (Marking on product)MIEB100W1200TEH16, 17, 1830, 31, 32D1 D3 D5T1 T3 T55 91196 10227 24 2128 25 22E72873NTC29 26 23Pin configuration see outlines.D2 D6D420T2 T4 T637 114 81233, 34, 35 13, 14, 15Features: Application: Package: SPT+ IGBT technology
Otros transistores... MIAA15WB600TMH , MIAA15WD600TMH , MIAA15WE600TMH , MIAA20WB600TMH , MIAA20WD600TMH , MIAA20WE600TMH , MID400-12E4 , MIEB100W1200TEH , BT15T120ANF , MIEB101W1200EH , MII100-12A3 , MII145-12A3 , MII150-12A4 , MII200-12A4 , MII300-12A4 , MII300-12E4 , MII400-12E4 .
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