MITB10WB1200TMH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MITB10WB1200TMH
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 70 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 17 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
MITB10WB1200TMH Datasheet (PDF)
mitb10wb1200tmh.pdf

Advanced Technical Information MITB10WB1200TMHThree Phase Brake Three PhaseConverter - Brake - InverterRectifier Chopper Inverter ModuleVRRM = 1600 V VCES = 1200 V VCES = 1200 VIDAVM25 = 90 A IC25 = 17 A IC25 = 17 ALow Loss Trench IGBTIFSM = 300 A VCE(sat) = 1.9 V VCE(sat) = 1.9 VPart name (Marking on product)MITB10WB1200TMHP P1T1 T3 T5D8 D10 D12 D7 D1 D3 D5NTC1G1
mitb15wb1200tmh.pdf

MITB15WB1200TMHThree Phase Brake Three PhaseConverter - Brake - InverterRectifier Chopper Inverter ModuleVRRM = 1600 V VCES = 1200 V VCES = 1200 VIDAVM25 = 90 A IC25 = 29 A IC25 = 29 ALow Loss Trench IGBTIFSM = 300 A VCE(sat) = 1.7 V VCE(sat) = 1.7 VPart name (Marking on product)MITB15WB1200TMHP P1T1 T3 T5D8 D10 D12 D7 D1 D3 D5NTC1G1 G3 G5L1L2 B U V WL3T2
Otros transistores... MIO1200-33E11 , MIO1500-25E10 , MIO1800-17E10 , MIO2400-17E10 , MIO600-65E11 , MITA10WB1200TMH , MITA15WB1200TMH , MITA30WB600TMH , FGH40N60SFD , MITB15WB1200TMH , 2PG009 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , IGC19T65QE , MIXA10W1200TMH , IGC193T120T8RM .
History: CM150TX-24S | IRG4BC30K-S | APT45GP120J | HGT1S7N60B3D | APT30GT60CR | MG06200S-BN4MM | JT075N120F2MA1E
History: CM150TX-24S | IRG4BC30K-S | APT45GP120J | HGT1S7N60B3D | APT30GT60CR | MG06200S-BN4MM | JT075N120F2MA1E



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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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