MITB10WB1200TMH Todos los transistores

 

MITB10WB1200TMH IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MITB10WB1200TMH

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 70 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 17 A

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

Encapsulados: MODULE

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MITB10WB1200TMH datasheet

 0.1. Size:183K  ixys
 mitb10wb1200tmh.pdf pdf_icon

MITB10WB1200TMH

Advanced Technical Information MITB10WB1200TMH Three Phase Brake Three Phase Converter - Brake - Inverter Rectifier Chopper Inverter Module VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 90 A IC25 = 17 A IC25 = 17 A Low Loss Trench IGBT IFSM = 300 A VCE(sat) = 1.9 V VCE(sat) = 1.9 V Part name (Marking on product) MITB10WB1200TMH P P1 T1 T3 T5 D8 D10 D12 D7 D1 D3 D5 NTC1 G1

 9.1. Size:182K  ixys
 mitb15wb1200tmh.pdf pdf_icon

MITB10WB1200TMH

MITB15WB1200TMH Three Phase Brake Three Phase Converter - Brake - Inverter Rectifier Chopper Inverter Module VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 90 A IC25 = 29 A IC25 = 29 A Low Loss Trench IGBT IFSM = 300 A VCE(sat) = 1.7 V VCE(sat) = 1.7 V Part name (Marking on product) MITB15WB1200TMH P P1 T1 T3 T5 D8 D10 D12 D7 D1 D3 D5 NTC1 G1 G3 G5 L1 L2 B U V W L3 T2

Otros transistores... MIO1200-33E11 , MIO1500-25E10 , MIO1800-17E10 , MIO2400-17E10 , MIO600-65E11 , MITA10WB1200TMH , MITA15WB1200TMH , MITA30WB600TMH , FGH40N60SFD , MITB15WB1200TMH , 2PG009 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , IGC19T65QE , MIXA10W1200TMH , IGC193T120T8RM .

History: MG75Q1BS11 | CT25ASJ-8 | SKM75GDL123D

 

 

 

 

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