MITB15WB1200TMH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MITB15WB1200TMH
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 100 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 29 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Qgⓘ - Carga total de la puerta, typ: 92 nC
Paquete / Cubierta: MODULE
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MITB15WB1200TMH Datasheet (PDF)
mitb15wb1200tmh.pdf
MITB15WB1200TMHThree Phase Brake Three PhaseConverter - Brake - InverterRectifier Chopper Inverter ModuleVRRM = 1600 V VCES = 1200 V VCES = 1200 VIDAVM25 = 90 A IC25 = 29 A IC25 = 29 ALow Loss Trench IGBTIFSM = 300 A VCE(sat) = 1.7 V VCE(sat) = 1.7 VPart name (Marking on product)MITB15WB1200TMHP P1T1 T3 T5D8 D10 D12 D7 D1 D3 D5NTC1G1 G3 G5L1L2 B U V WL3T2
mitb10wb1200tmh.pdf
Advanced Technical Information MITB10WB1200TMHThree Phase Brake Three PhaseConverter - Brake - InverterRectifier Chopper Inverter ModuleVRRM = 1600 V VCES = 1200 V VCES = 1200 VIDAVM25 = 90 A IC25 = 17 A IC25 = 17 ALow Loss Trench IGBTIFSM = 300 A VCE(sat) = 1.9 V VCE(sat) = 1.9 VPart name (Marking on product)MITB10WB1200TMHP P1T1 T3 T5D8 D10 D12 D7 D1 D3 D5NTC1G1
Otros transistores... MIO1500-25E10 , MIO1800-17E10 , MIO2400-17E10 , MIO600-65E11 , MITA10WB1200TMH , MITA15WB1200TMH , MITA30WB600TMH , MITB10WB1200TMH , FGH40N60SFD , 2PG009 , MIXA100W1200TEH , IGC27T120T6L , MIXA101W1200EH , IGC19T65QE , MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2