IGC27T120T6L Todos los transistores

 ..1. Size:70K  infineon
 igc27t120t6l.pdf

IGC27T120T6L IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC27T120T6L 1200V 25A 4.99 x 5.45 mm2 sawn on foil MECHANICAL

 4.1. Size:69K  infineon
 igc27t120t8q.pdf

IGC27T120T8Q High Speed IGBT in Trench and Fieldstop Technology Features Recommended for 1200V Trench + Field stop technology discrete components C low switching losses positive temperature coefficient Applications easy paralleling high frequency drives G UPS E Welding Solar inverters Chip Type VCE ICn1) Die Size Package IGC27T120T8Q 1200V

 4.2. Size:66K  infineon
 igc27t120t8l.pdf

IGC27T120T8L IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC27T120T8L 1200V 25A