IGC27T120T6L PDF and Equivalents Search

 

IGC27T120T6L Specs and Replacement

Type Designator: IGC27T120T6L

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 25 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

Coesⓘ - Output Capacitance, typ: 115 pF

Package: CHIP

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IGC27T120T6L datasheet

 ..1. Size:70K  infineon
igc27t120t6l.pdf pdf_icon

IGC27T120T6L

IGC27T120T6L IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC27T120T6L 1200V 25A 4.99 x 5.45 mm2 sawn on foil MECHANICAL ... See More ⇒

 4.1. Size:69K  infineon
igc27t120t8q.pdf pdf_icon

IGC27T120T6L

IGC27T120T8Q High Speed IGBT in Trench and Fieldstop Technology Features Recommended for 1200V Trench + Field stop technology discrete components C low switching losses positive temperature coefficient Applications easy paralleling high frequency drives G UPS E Welding Solar inverters Chip Type VCE ICn1) Die Size Package IGC27T120T8Q 1200V ... See More ⇒

 4.2. Size:66K  infineon
igc27t120t8l.pdf pdf_icon

IGC27T120T6L

IGC27T120T8L IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC27T120T8L 1200V 25A ... See More ⇒

Specs: MIO600-65E11, MITA10WB1200TMH, MITA15WB1200TMH, MITA30WB600TMH, MITB10WB1200TMH, MITB15WB1200TMH, 2PG009, MIXA100W1200TEH, FGD4536, MIXA101W1200EH, IGC19T65QE, MIXA10W1200TMH, IGC193T120T8RM, MIXA10W1200TML, IGC18T120T8Q, MIXA10WB1200TED, IGC18T120T8L

Keywords - IGC27T120T6L transistor spec

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