IGC27T120T6L IGBT. Datasheet pdf. Equivalent
Type Designator: IGC27T120T6L
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 115 pF
Package: CHIP
IGC27T120T6L Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGC27T120T6L Datasheet (PDF)
igc27t120t6l.pdf
IGC27T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC27T120T6L 1200V 25A 4.99 x 5.45 mm2 sawn on foil MECHANICAL
igc27t120t8q.pdf
IGC27T120T8QHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology discrete componentsC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC27T120T8Q 1200V
igc27t120t8l.pdf
IGC27T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC27T120T8L 1200V 25A
Datasheet: MIO600-65E11 , MITA10WB1200TMH , MITA15WB1200TMH , MITA30WB600TMH , MITB10WB1200TMH , MITB15WB1200TMH , 2PG009 , MIXA100W1200TEH , MBQ60T65PES , MIXA101W1200EH , IGC19T65QE , MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , IGC18T120T8Q , MIXA10WB1200TED , IGC18T120T8L .
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