IGC18T120T6L Todos los transistores

 

IGC18T120T6L - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGC18T120T6L
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 80 pF
   Paquete / Cubierta: CHIP
     - Selección de transistores por parámetros

 

IGC18T120T6L Datasheet (PDF)

 ..1. Size:69K  infineon
igc18t120t6l.pdf pdf_icon

IGC18T120T6L

IGC18T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC18T120T6L 1200V 15A 4.16 x 4.34 mm2 sawn on foil MECHANICAL

 4.1. Size:68K  infineon
igc18t120t8q.pdf pdf_icon

IGC18T120T6L

IGC18T120T8QHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology discrete componentsC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn Die Size PackageIGC18T120T8Q 1200V 15

 4.2. Size:69K  infineon
igc18t120t8l.pdf pdf_icon

IGC18T120T6L

IGC18T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC18T120T8L 1200V 15A

 8.1. Size:73K  infineon
sigc18t60snc.pdf pdf_icon

IGC18T120T6L

SIGC18T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip SGP20N60 short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-S2856-SIGC18T60SNC 600V 20A 4.3 x 4.3 mm2 sawn on foil A001 Q67041-S28

Otros transistores... MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , IGC18T120T8Q , MIXA10WB1200TED , IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML , IHW20N120R3 , MIXA150W1200TEH , IGC13T120T6L , MIXA151W1200EH , IGC54T65T8RM , MIXA20W1200MC , IGC54T65R3QE , MIXA20W1200TMH , IGC50T120T8RQ .

History: DF900R12IP4D | STGWT30V60F | T0360NB25A

 

 
Back to Top

 


History: DF900R12IP4D | STGWT30V60F | T0360NB25A

IGC18T120T6L
  IGC18T120T6L
  IGC18T120T6L
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M

 

 

 
Back to Top

 

Popular searches

2sc1885 datasheet | 2sc2580 | 2sc710 | 2sc968 | 2sd217 | bdw93c equivalent | cs7n60f | d613 transistor

 


 
.