IGC18T120T6L Todos los transistores

 

IGC18T120T6L IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGC18T120T6L

Tipo de transistor: IGBT

Polaridad de transistor: N

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

Coesⓘ - Capacitancia de salida, typ: 80 pF

Encapsulados: CHIP

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IGC18T120T6L datasheet

 ..1. Size:69K  infineon
igc18t120t6l.pdf pdf_icon

IGC18T120T6L

IGC18T120T6L IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC18T120T6L 1200V 15A 4.16 x 4.34 mm2 sawn on foil MECHANICAL

 4.1. Size:68K  infineon
igc18t120t8q.pdf pdf_icon

IGC18T120T6L

IGC18T120T8Q High Speed IGBT in Trench and Fieldstop Technology Features Recommended for 1200V Trench + Field stop technology discrete components C low switching losses positive temperature coefficient Applications easy paralleling high frequency drives G UPS E Welding Solar inverters Chip Type VCE ICn Die Size Package IGC18T120T8Q 1200V 15

 4.2. Size:69K  infineon
igc18t120t8l.pdf pdf_icon

IGC18T120T6L

IGC18T120T8L IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC18T120T8L 1200V 15A

 8.1. Size:73K  infineon
sigc18t60snc.pdf pdf_icon

IGC18T120T6L

SIGC18T60SNC IGBT Chip in NPT-technology C FEATURES This chip is used for 600V NPT technology 100 m chip SGP20N60 short circuit prove positive temperature coefficient Applications G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-S2856- SIGC18T60SNC 600V 20A 4.3 x 4.3 mm2 sawn on foil A001 Q67041-S28

Otros transistores... MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , IGC18T120T8Q , MIXA10WB1200TED , IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML , RJP30H1DPD , MIXA150W1200TEH , IGC13T120T6L , MIXA151W1200EH , IGC54T65T8RM , MIXA20W1200MC , IGC54T65R3QE , MIXA20W1200TMH , IGC50T120T8RQ .

History: AFGY120T65SPD-B4 | SKM75GAL063D | NCE30TD60BP

 

 

 


History: AFGY120T65SPD-B4 | SKM75GAL063D | NCE30TD60BP

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