IGC18T120T6L - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGC18T120T6L
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 80 pF
Paquete / Cubierta: CHIP
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IGC18T120T6L Datasheet (PDF)
igc18t120t6l.pdf
IGC18T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC18T120T6L 1200V 15A 4.16 x 4.34 mm2 sawn on foil MECHANICAL
igc18t120t8q.pdf
IGC18T120T8QHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology discrete componentsC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn Die Size PackageIGC18T120T8Q 1200V 15
igc18t120t8l.pdf
IGC18T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC18T120T8L 1200V 15A
sigc18t60snc.pdf
SIGC18T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip SGP20N60 short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-S2856-SIGC18T60SNC 600V 20A 4.3 x 4.3 mm2 sawn on foil A001 Q67041-S28
sigc18t60nc.pdf
SIGC18T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules positive temperature coefficient easy paralleling Applications: GE drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4139-SIGC18T60NC 600V 20A 4.3 x 4.3 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Rast
sigc18t60un.pdf
SIGC18T60UN High Speed IGBT Chip in NPT-technology CFEATURES: This chip is used for: low Eoff SGP20N60HS 600V NPT technology 100m chip Applications: G short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4222-SIGC18T60UN 600V
Otros transistores... MIXA10W1200TMH , IGC193T120T8RM , MIXA10W1200TML , IGC18T120T8Q , MIXA10WB1200TED , IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML , RJP63F3DPP-M0 , MIXA150W1200TEH , IGC13T120T6L , MIXA151W1200EH , IGC54T65T8RM , MIXA20W1200MC , IGC54T65R3QE , MIXA20W1200TMH , IGC50T120T8RQ .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2