GA150TS60U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GA150TS60U
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 440 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 145 nS
Coesⓘ - Capacitancia de salida, typ: 860 pF
Qgⓘ - Carga total de la puerta, typ: 624 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de GA150TS60U - IGBT
GA150TS60U Datasheet (PDF)
ga150ts60u.pdf
PD -50056CGA150TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeatures Generation 4 IGBT technologyVCES = 600V UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.7V kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes wit
ga150td12u.pdf
PD -5.067GA150TD120UP "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBTFeaturesVCES = 1200V Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft@VGE = 15V, IC = 150A recovery
ga150td120u.pdf
PD - 5.067AGA150TD120UPRELIMINARY"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBTFeaturesVCES = 1200V Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft@VGE = 15V, IC = 150A
ga150ks61u.pdf
PD -94346GA150KS61U Low Side Switch Chopper ModuleIGBT INT-A-PAKUltra-FastTM Speed IGBTFeatures3 Generation 4 IGBT technologyVCES = 600V UltraFast: Optimized for high operating1 frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.7V6 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft
Otros transistores... DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , IRGB20B60PD1 , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U .
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