GA150TS60U - аналоги, параметры транзистора - Справочник транзисторов

GA150TS60U даташит

..1. Size:251K international rectifier
ga150ts60u.pdf pdf_icon

PD -50056C GA150TS60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features Features Features Features Features Generation 4 IGBT technology VCES = 600V UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.7V kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes wit

8.1. Size:181K international rectifier
ga150td12u.pdf pdf_icon

PD -5.067 GA150TD120U P "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V Generation 4 IGBT technology Standard Optimized for minimum saturation voltage and operating frequencies up to 10kHz VCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft @VGE = 15V, IC = 150A recovery

8.2. Size:298K international rectifier
ga150td120u.pdf pdf_icon

PD - 5.067A GA150TD120U PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V Generation 4 IGBT technology Standard Optimized for minimum saturation voltage and operating frequencies up to 10kHz VCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft @VGE = 15V, IC = 150A

9.1. Size:154K international rectifier
ga150ks61u.pdf pdf_icon

PD -94346 GA150KS61U Low Side Switch Chopper Module IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features 3 Generation 4 IGBT technology VCES = 600V UltraFast Optimized for high operating 1 frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.7V 6 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft

Другие IGBT... DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , IKW40N65WR5 , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U .