IGC54T65R3QE IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGC54T65R3QE datasheet

..1. Size:88K infineon
igc54t65r3qe.pdf pdf_icon

IGC54T65R3QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switchi

4.1. Size:122K infineon
sigc54t65r3e.pdf pdf_icon

SIGC54T65R3E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC54T65R3E

6.1. Size:76K infineon
igc54t65t8rm.pdf pdf_icon

IGC54T65T8RM IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC54T65T

7.1. Size:120K infineon
sigc54t60r3e.pdf pdf_icon

SIGC54T60R3E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC54T60R3E 600V 100A 5.97 x 8.97 mm2 sawn on foil Mechanical Parame