IGC54T65R3QE PDF and Equivalents Search

 

IGC54T65R3QE Specs and Replacement

Type Designator: IGC54T65R3QE

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.22 V @25℃

Package: CHIP

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IGC54T65R3QE datasheet

 ..1. Size:88K  infineon
igc54t65r3qe.pdf pdf_icon

IGC54T65R3QE

IGC54T65R3QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switchi... See More ⇒

 4.1. Size:122K  infineon
sigc54t65r3e.pdf pdf_icon

IGC54T65R3QE

SIGC54T65R3E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC54T65R3E... See More ⇒

 6.1. Size:76K  infineon
igc54t65t8rm.pdf pdf_icon

IGC54T65R3QE

IGC54T65T8RM IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC54T65T... See More ⇒

 7.1. Size:120K  infineon
sigc54t60r3e.pdf pdf_icon

IGC54T65R3QE

SIGC54T60R3E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC54T60R3E 600V 100A 5.97 x 8.97 mm2 sawn on foil Mechanical Parame... See More ⇒

Specs: MIXA10WB1200TMH, MIXA10WB1200TML, IGC18T120T6L, MIXA150W1200TEH, IGC13T120T6L, MIXA151W1200EH, IGC54T65T8RM, MIXA20W1200MC, RJP63F3DPP-M0, MIXA20W1200TMH, IGC50T120T8RQ, MIXA20W1200TML, IGC50T120T8RL, MIXA20WB1200TED, IGC50T120T6RL, MIXA20WB1200TMH, IGC41T120T8Q

Keywords - IGC54T65R3QE transistor spec

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