IGC50T120T8RQ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGC50T120T8RQ Datasheet (PDF)

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IGC50T120T8RQHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology power modulesC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC50T120T8RQ 1200V 50A

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IGC50T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC50T120T8RL 1200V 50

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IGC50T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC50T120T6RL 1200V 50A 7.25 x 6.84 mm2 sawn on foil MECHANICA

Otros transistores... IGC18T120T6L , MIXA150W1200TEH , IGC13T120T6L , MIXA151W1200EH , IGC54T65T8RM , MIXA20W1200MC , IGC54T65R3QE , MIXA20W1200TMH , IRGP4086 , MIXA20W1200TML , IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , IGC39T65T8M .