IGC50T120T8RQ Datasheet. Specs and Replacement

Type Designator: IGC50T120T8RQ  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.42 V @25℃

Package: CHIP

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IGC50T120T8RQ datasheet

 ..1. Size:73K  infineon
igc50t120t8rq.pdf pdf_icon

IGC50T120T8RQ

IGC50T120T8RQ High Speed IGBT in Trench and Fieldstop Technology Features Recommended for 1200V Trench + Field stop technology power modules C low switching losses positive temperature coefficient Applications easy paralleling high frequency drives G UPS E Welding Solar inverters Chip Type VCE ICn1) Die Size Package IGC50T120T8RQ 1200V 50A ... See More ⇒

 2.1. Size:64K  infineon
igc50t120t8rl.pdf pdf_icon

IGC50T120T8RQ

IGC50T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC50T120T8RL 1200V 50... See More ⇒

 4.1. Size:71K  infineon
igc50t120t6rl.pdf pdf_icon

IGC50T120T8RQ

IGC50T120T6RL IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC50T120T6RL 1200V 50A 7.25 x 6.84 mm2 sawn on foil MECHANICA... See More ⇒

Specs: IGC18T120T6L, MIXA150W1200TEH, IGC13T120T6L, MIXA151W1200EH, IGC54T65T8RM, MIXA20W1200MC, IGC54T65R3QE, MIXA20W1200TMH, GT30F126, MIXA20W1200TML, IGC50T120T8RL, MIXA20WB1200TED, IGC50T120T6RL, MIXA20WB1200TMH, IGC41T120T8Q, MIXA20WB1200TML, IGC39T65T8M

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