GA200SA60S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GA200SA60S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 630 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 56 nS
Coesⓘ - Capacitancia de salida, typ: 1040 pF
Qgⓘ - Carga total de la puerta, typ: 770 nC
Paquete / Cubierta: SOT227
Búsqueda de reemplazo de GA200SA60S - IGBT
GA200SA60S Datasheet (PDF)
ga200sa60s.pdf
D /) 5)$ 5 I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard : Optimized for minimum saturationVCES = 600V voltage and low operating frequencies up to 1kHz Lowest conduction losses available Fully isolated package ( 2,500 volt AC)VCE(on) typ. = 1.10VG Very low internal inductance ( 5 nH ty
ga200sa60u.pdf
D GA200SA60U Ultra-FastTM Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for minimum saturation voltageVCES = 600V and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching lossesVCE(on) typ. = 1.60VG Fully isolate package ( 2,500 Volt AC/RMS) Very low internal
ga200sa60up.pdf
GA200SA60UPVishay SemiconductorsInsulated Gate Bipolar Transistor(Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: Optimized for minimum saturationvoltage and speed up to 40 kHz in hardswitching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical) Industry sta
vs-ga200sa60up.pdf
VS-GA200SA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi
Otros transistores... DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , IRG4PH50UD , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U .
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