All IGBT. GA200SA60S Datasheet

 

GA200SA60S IGBT. Datasheet pdf. Equivalent


   Type Designator: GA200SA60S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 630 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 56 nS
   Coesⓘ - Output Capacitance, typ: 1040 pF
   Qgⓘ - Total Gate Charge, typ: 770 nC
   Package: SOT227

 GA200SA60S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GA200SA60S Datasheet (PDF)

 ..1. Size:201K  international rectifier
 ga200sa60s.pdf

GA200SA60S GA200SA60S

D /) 5)$ 5 I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard : Optimized for minimum saturationVCES = 600V voltage and low operating frequencies up to 1kHz Lowest conduction losses available Fully isolated package ( 2,500 volt AC)VCE(on) typ. = 1.10VG Very low internal inductance ( 5 nH ty

 5.1. Size:197K  international rectifier
 ga200sa60u.pdf

GA200SA60S GA200SA60S

D GA200SA60U Ultra-FastTM Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for minimum saturation voltageVCES = 600V and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching lossesVCE(on) typ. = 1.60VG Fully isolate package ( 2,500 Volt AC/RMS) Very low internal

 5.2. Size:166K  vishay
 ga200sa60up.pdf

GA200SA60S GA200SA60S

GA200SA60UPVishay SemiconductorsInsulated Gate Bipolar Transistor(Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: Optimized for minimum saturationvoltage and speed up to 40 kHz in hardswitching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical) Industry sta

 5.3. Size:277K  vishay
 vs-ga200sa60up.pdf

GA200SA60S GA200SA60S

VS-GA200SA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi

Datasheet: DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , IRG4PH50UD , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U .

 

 
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