All IGBT. GA200SA60S Datasheet

 

GA200SA60S IGBT. Datasheet pdf. Equivalent

Type Designator: GA200SA60S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 630W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.30V

Maximum Collector Current |Ic|, A: 100A

Maximum Junction Temperature (Tj), °C: 150

Package: SOT227

GA200SA60S Transistor Equivalent Substitute - IGBT Cross-Reference Search

GA200SA60S PDF doc:

1.1. ga200sa60u.pdf Size:197K _international_rectifier

GA200SA60S
GA200SA60S

D GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage VCES = 600V and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses VCE(on) typ. = 1.60V G • Fully isolate package ( 2,500 Volt AC/RMS) • Very low internal inductance

1.2. ga200sa60s.pdf Size:201K _international_rectifier

GA200SA60S
GA200SA60S

D /) 5)$ 5 I T I T D T I T I T Features C Features Features Features Features • Standard : Optimized for minimum saturation VCES = 600V voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) VCE(on) typ. = 1.10V G • Very low internal inductance ( 5 nH typ.) • Indu

1.3. ga200sa60up.pdf Size:166K _vishay

GA200SA60S
GA200SA60S

GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance (? 5 nH typical) • Industry standard outline

1.4. vs-ga200sa60up.pdf Size:277K _igbt

GA200SA60S
GA200SA60S

ïğżVS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance ( 5 nH typi

Datasheet: G7N60C3 , G7N60C3D , G8P50G , GA100TS120U , GA100TS60U , GA125TS120U , GA150TD120U , GA150TS60U , RJP63F3DPP-M0 , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U .

 


GA200SA60S
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