GA200SA60S PDF and Equivalents Search

 

GA200SA60S Specs and Replacement

Type Designator: GA200SA60S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 630 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃

tr ⓘ - Rise Time, typ: 56 nS

Coesⓘ - Output Capacitance, typ: 1040 pF

Package: SOT227

 GA200SA60S Substitution

- IGBTⓘ Cross-Reference Search

 

GA200SA60S datasheet

 ..1. Size:201K  international rectifier
ga200sa60s.pdf pdf_icon

GA200SA60S

D /) 5)$ 5 I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies up to 1kHz Lowest conduction losses available Fully isolated package ( 2,500 volt AC) VCE(on) typ. = 1.10V G Very low internal inductance ( 5 nH ty... See More ⇒

 5.1. Size:197K  international rectifier
ga200sa60u.pdf pdf_icon

GA200SA60S

D GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for minimum saturation voltage VCES = 600V and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses VCE(on) typ. = 1.60V G Fully isolate package ( 2,500 Volt AC/RMS) Very low internal ... See More ⇒

 5.2. Size:166K  vishay
ga200sa60up.pdf pdf_icon

GA200SA60S

GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES Ultrafast Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical) Industry sta... See More ⇒

 5.3. Size:277K  vishay
vs-ga200sa60up.pdf pdf_icon

GA200SA60S

VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES Ultrafast optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi... See More ⇒

Specs: DG75X12T2, MSG100D350FHS, MSG100N350FH, GA100TS120U, GA100TS60U, GA125TS120U, GA150TD120U, GA150TS60U, GT30F125, GA200SA60U, GA200TD120U, GA250TD120U, GA250TS60U, GA300TD60U, GA400TD25S, GA400TD60U, GA500TD60U

Keywords - GA200SA60S transistor spec

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