GA200SA60S Datasheet and Replacement

D /) 5)$ 5 I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard : Optimized for minimum saturationVCES = 600V voltage and low operating frequencies up to 1kHz Lowest conduction losses available Fully isolated package ( 2,500 volt AC)VCE(on) typ. = 1.10VG Very low internal inductance ( 5 nH ty

D GA200SA60U Ultra-FastTM Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for minimum saturation voltageVCES = 600V and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching lossesVCE(on) typ. = 1.60VG Fully isolate package ( 2,500 Volt AC/RMS) Very low internal

GA200SA60UPVishay SemiconductorsInsulated Gate Bipolar Transistor(Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: Optimized for minimum saturationvoltage and speed up to 40 kHz in hardswitching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical) Industry sta

VS-GA200SA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi