IGC41T120T8Q - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IGC41T120T8QHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology discrete componentsC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC41T120T8Q 1200V

SIGC41T120R3LE IGBT3 Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC41T120R3LE 1200V 40A 6.5 x 6.37 mm2 sawn on foil Mechanical Parameters Raster

SIGC41T120R3E IGBT3 Power Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC41T120R3E 1200V 35A 6.5 x 6.37 mm2 sawn on foil Mechanical Parameters

SIGC41T120R3 IGBT3 Chip FEATURES: This chip is used for: C 1200V Trench + Field Stop technology low turn-off losses power module short tail current positive temperature coefficient Applications: easy paralleling G drives E Chip Type VCE ICn Die Size Package Ordering Code Q67050-SIGC41T120R3 1200V 35A 6.5 x 6.37 mm2 sawn on foil A4105-A001

SIGC41T120R3LE IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC41T120R3LE 1200V 40A 6.5 x 6.37 mm2 sawn on foil Mechanical Parameters