IGC41T120T8Q - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IGC41T120T8Q
Тип транзистора: IGBT
Тип управляющего канала: N
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.42 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.3 V
Tjⓘ - Максимальная температура перехода: 175 ℃
Тип корпуса: CHIP
Аналог (замена) для IGC41T120T8Q
IGC41T120T8Q Datasheet (PDF)
igc41t120t8q.pdf
IGC41T120T8QHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology discrete componentsC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC41T120T8Q 1200V
sigc41t120r3l.pdf
SIGC41T120R3LE IGBT3 Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC41T120R3LE 1200V 40A 6.5 x 6.37 mm2 sawn on foil Mechanical Parameters Raster
sigc41t120r3e.pdf
SIGC41T120R3E IGBT3 Power Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC41T120R3E 1200V 35A 6.5 x 6.37 mm2 sawn on foil Mechanical Parameters
sigc41t120r3.pdf
SIGC41T120R3 IGBT3 Chip FEATURES: This chip is used for: C 1200V Trench + Field Stop technology low turn-off losses power module short tail current positive temperature coefficient Applications: easy paralleling G drives E Chip Type VCE ICn Die Size Package Ordering Code Q67050-SIGC41T120R3 1200V 35A 6.5 x 6.37 mm2 sawn on foil A4105-A001
sigc41t120r3le.pdf
SIGC41T120R3LE IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC41T120R3LE 1200V 40A 6.5 x 6.37 mm2 sawn on foil Mechanical Parameters
Другие IGBT... IGC54T65R3QE , MIXA20W1200TMH , IGC50T120T8RQ , MIXA20W1200TML , IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH , FGPF4633 , MIXA20WB1200TML , IGC39T65T8M , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IGC36T120T8L , MIXA30W1200TML , IGC36T120T6L .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2