IGC36T120T8L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGC36T120T8L  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.07 V @25℃

Encapsulados: CHIP

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IGC36T120T8L datasheet

 ..1. Size:65K  infineon
 igc36t120t8l.pdf pdf_icon

IGC36T120T8L

IGC36T120T8L IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC36T120T8L 1200V 35A

 4.1. Size:69K  infineon
 igc36t120t6l.pdf pdf_icon

IGC36T120T8L

IGC36T120T6L IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC36T120T6L 1200V 35A 6.36 x 5.67 mm2 sawn on foil MECHANICAL

Otros transistores... IGC50T120T6RL, MIXA20WB1200TMH, IGC41T120T8Q, MIXA20WB1200TML, IGC39T65T8M, MIXA30W1200TED, IGC39T65QE, MIXA30W1200TMH, RJP63F3DPP-M0, MIXA30W1200TML, IGC36T120T6L, MIXA30WB1200TED, IGC31T65QE, MIXA40W1200TED, IGC99T120T8RQ, MIXA40W1200TMH, IGC99T120T8RM