All IGBT. IGC36T120T8L Datasheet

 

IGC36T120T8L Datasheet and Replacement


   Type Designator: IGC36T120T8L
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.07 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Package: CHIP
 

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IGC36T120T8L Datasheet (PDF)

 ..1. Size:65K  infineon
 igc36t120t8l.pdf pdf_icon

IGC36T120T8L

IGC36T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC36T120T8L 1200V 35A

 4.1. Size:69K  infineon
 igc36t120t6l.pdf pdf_icon

IGC36T120T8L

IGC36T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC36T120T6L 1200V 35A 6.36 x 5.67 mm2 sawn on foil MECHANICAL

Datasheet: IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , IGC39T65T8M , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , MBQ50T65FDSC , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE , MIXA40W1200TED , IGC99T120T8RQ , MIXA40W1200TMH , IGC99T120T8RM .

History: MWI50-12A7 | APT32GU30B | MIXA30W1200TML | SGT10T60SDM1D | F3L100R07W2E3_B11 | IXBH15N160 | F3L300R12ME4-B23

Keywords - IGC36T120T8L transistor datasheet

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