IGC36T120T8L PDF and Equivalents Search

 

IGC36T120T8L Specs and Replacement

Type Designator: IGC36T120T8L

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.07 V @25℃

Package: CHIP

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IGC36T120T8L datasheet

 ..1. Size:65K  infineon
 igc36t120t8l.pdf pdf_icon

IGC36T120T8L

IGC36T120T8L IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC36T120T8L 1200V 35A ... See More ⇒

 4.1. Size:69K  infineon
 igc36t120t6l.pdf pdf_icon

IGC36T120T8L

IGC36T120T6L IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC36T120T6L 1200V 35A 6.36 x 5.67 mm2 sawn on foil MECHANICAL ... See More ⇒

Specs: IGC50T120T6RL , MIXA20WB1200TMH , IGC41T120T8Q , MIXA20WB1200TML , IGC39T65T8M , MIXA30W1200TED , IGC39T65QE , MIXA30W1200TMH , IKW50N60T , MIXA30W1200TML , IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE , MIXA40W1200TED , IGC99T120T8RQ , MIXA40W1200TMH , IGC99T120T8RM .

Keywords - IGC36T120T8L transistor spec

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