IGC99T120T8RL Todos los transistores

 

IGC99T120T8RL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGC99T120T8RL

Tipo de transistor: IGBT

Polaridad de transistor: N

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.97 V @25℃

Encapsulados: CHIP

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IGC99T120T8RL datasheet

 ..1. Size:67K  infineon
igc99t120t8rl.pdf pdf_icon

IGC99T120T8RL

IGC99T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC99T120T8RL 1200V 10

 2.1. Size:70K  infineon
igc99t120t8rh.pdf pdf_icon

IGC99T120T8RL

IGC99T120T8RH IGBT4 High Power Chip Features Recommended for 1200V Trench + Field stop technology medium / high power modules C low VCE(sat) soft turn off Applications positive temperature coefficient medium / high power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn1 ) Die Size Package IGC99T

 2.2. Size:82K  infineon
igc99t120t8rq.pdf pdf_icon

IGC99T120T8RL

IGC99T120T8RQ High Speed IGBT in Trench and Fieldstop Technology Features This chip is used for 1200V Trench & Field stop technology power modules C low switching losses positive temperature coefficient Applications easy paralleling high frequency drives G UPS E Welding Solar inverters Chip Type VCE ICn1) Die Size Package IGC99T120T8RQ 1200

 2.3. Size:72K  infineon
igc99t120t8rm.pdf pdf_icon

IGC99T120T8RL

IGC99T120T8RM IGBT4 Medium Power Chip Features Recommended for 1200V Trench & Field stop technology medium power modules C low switching losses soft turn off Applications positive temperature coefficient medium power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn1 ) Die Size Package IGC99T120T

Otros transistores... IGC36T120T6L , MIXA30WB1200TED , IGC31T65QE , MIXA40W1200TED , IGC99T120T8RQ , MIXA40W1200TMH , IGC99T120T8RM , MIXA40W1200TML , JT075N065WED , MIXA40WB1200TED , IGC99T120T8RH , MIXA60W1200TED , IGC99T120T6RM , MIXA60WB1200TEH , IGC99T120T6RL , MIXA61H1200ED , IGC99T120T6RH .

History: IGC31T65QE

 

 

 


 
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