IGC99T120T8RL - аналоги, параметры транзистора

IGC99T120T8RL даташит

..1. Size:67K infineon
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IGC99T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC99T120T8RL 1200V 10

2.1. Size:70K infineon
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IGC99T120T8RH IGBT4 High Power Chip Features Recommended for 1200V Trench + Field stop technology medium / high power modules C low VCE(sat) soft turn off Applications positive temperature coefficient medium / high power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn1 ) Die Size Package IGC99T

2.2. Size:82K infineon
igc99t120t8rq.pdf pdf_icon

IGC99T120T8RQ High Speed IGBT in Trench and Fieldstop Technology Features This chip is used for 1200V Trench & Field stop technology power modules C low switching losses positive temperature coefficient Applications easy paralleling high frequency drives G UPS E Welding Solar inverters Chip Type VCE ICn1) Die Size Package IGC99T120T8RQ 1200

2.3. Size:72K infineon
igc99t120t8rm.pdf pdf_icon

IGC99T120T8RM IGBT4 Medium Power Chip Features Recommended for 1200V Trench & Field stop technology medium power modules C low switching losses soft turn off Applications positive temperature coefficient medium power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn1 ) Die Size Package IGC99T120T

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