MWI100-06A8 Todos los transistores

 

MWI100-06A8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MWI100-06A8
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 410 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 130 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Qgⓘ - Carga total de la puerta, typ: 340 nC
   Paquete / Cubierta: MODULE

 Búsqueda de reemplazo de MWI100-06A8 - IGBT

 

MWI100-06A8 Datasheet (PDF)

 ..1. Size:77K  ixys
mwi100-06a8.pdf pdf_icon

MWI100-06A8

MWI 100-06 A8 IC25 = 130 A IGBT Modules VCES = 600 V Sixpack VCE(sat) typ. = 2.0 V Short Circuit SOA Capability Square RBSOA 13, 21 1 5 9 Preliminary data 2 6 10 19 17 15 3 7 11 E72873 4 8 12 See outline drawing for pin arrangement 14, 20 Features IGBTs NPT IGBT technology Symbol Conditions Maximum Ratings low saturation voltage low switching losses VC

 7.1. Size:319K  ixys
mwi100-12t8t.pdf pdf_icon

MWI100-06A8

MWI100-12T8T VCES = 1200 V Six-Pack IC25 = 145 A Trench IGBT VCE(sat) = 1.7 V Part name (Marking on product) MWI100-12T8T 16, 17, 18 30, 31, 32 5 9 1 19 6 10 2 27 24 21 E72873 28 25 22 NTC 29 26 23 Pin configuration see outlines. 20 3 7 11 4 8 12 33, 34, 35 13, 14, 15 Features Application Package Trench IGBT technology AC motor drives "E3-Pack" standar

 7.2. Size:182K  ixys
mwi100-12e8.pdf pdf_icon

MWI100-06A8

MWI 100-12 E8 MKI 100-12 E8 IC25 = 165 A IGBT Modules VCES = 1200 V Sixpack, H Bridge VCE(sat) typ. = 2.0 V Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 6 2 10 2 10 19 19 17 15 15 7 11 11 3 3 E72873 4 4 8 12 12 See outline drawing for pin arrangement 14, 20 14, 20 MWI MKI Features IGBTs NPT3 IGBTs Symbol Conditions Maximum Ratings - low sa

 7.3. Size:128K  ixys
mwi100-12a8.pdf pdf_icon

MWI100-06A8

MWI 100-12 A8 IC25 = 160 A IGBT Modules VCES = 1200 V Sixpack VCE(sat) typ. = 2.2 V Short Circuit SOA Capability Square RBSOA 13, 21 1 5 9 2 6 10 19 17 15 E72873 3 7 11 See outline drawing for pin arrangement 4 8 12 14, 20 Features IGBTs NPT IGBT technology Symbol Conditions Maximum Ratings low saturation voltage low switching losses VCES TVJ = 25 C to

Otros transistores... MUBW50-06A8 , MUBW50-12A8 , MUBW50-12E8 , MUBW50-12T8 , MUBW50-17T8 , MUBW75-06A8 , MUBW75-12T8 , MUBW75-17T8 , RJP30H2A , MWI100-12A8 , MWI100-12E8 , MWI100-12T8T , MWI150-06A8 , MWI150-12T8T , MWI15-12A6K , MWI15-12A7 , MWI200-06A8 .

 

 
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