All IGBT. MWI100-06A8 Datasheet

 

MWI100-06A8 IGBT. Datasheet pdf. Equivalent


   Type Designator: MWI100-06A8
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 410 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Ic|ⓘ - Maximum Collector Current: 130 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Qgⓘ - Total Gate Charge, typ: 340 nC
   Package: MODULE

 MWI100-06A8 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MWI100-06A8 Datasheet (PDF)

 ..1. Size:77K  ixys
 mwi100-06a8.pdf

MWI100-06A8 MWI100-06A8

MWI 100-06 A8IC25 = 130 AIGBT ModulesVCES = 600 VSixpackVCE(sat) typ. = 2.0 VShort Circuit SOA CapabilitySquare RBSOA13, 211 5 9Preliminary data2 6 101917153 7 11 E728734 8 12See outline drawing for pin arrangement14, 20Features IGBTsNPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltagelow switching lossesVC

 7.1. Size:319K  ixys
 mwi100-12t8t.pdf

MWI100-06A8 MWI100-06A8

MWI100-12T8TVCES = 1200 VSix-PackIC25 = 145 ATrench IGBTVCE(sat) = 1.7 VPart name (Marking on product)MWI100-12T8T16, 17, 1830, 31, 325 91196 10227 24 21E7287328 25 22NTC29 26 23Pin configuration see outlines.2037 114 81233, 34, 35 13, 14, 15Features: Application: Package: Trench IGBT technology AC motor drives "E3-Pack" standar

 7.2. Size:182K  ixys
 mwi100-12e8.pdf

MWI100-06A8 MWI100-06A8

MWI 100-12 E8MKI 100-12 E8IC25 = 165 AIGBT ModulesVCES = 1200 VSixpack, H BridgeVCE(sat) typ. = 2.0 VShort Circuit SOA CapabilitySquare RBSOA13, 21 13, 211 5 9 1 962 10 2 1019191715157 11 113 3E728734 48 12 12See outline drawing for pin arrangement14, 2014, 20MWI MKIFeatures IGBTs NPT3 IGBTsSymbol Conditions Maximum Ratings - low sa

 7.3. Size:128K  ixys
 mwi100-12a8.pdf

MWI100-06A8 MWI100-06A8

MWI 100-12 A8IC25 = 160 AIGBT ModulesVCES = 1200 VSixpackVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA13, 211 5 92 6 10191715E728733 7 11 See outline drawing for pin arrangement4 8 1214, 20Features IGBTsNPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltagelow switching lossesVCES TVJ = 25C to

Datasheet: MUBW50-06A8 , MUBW50-12A8 , MUBW50-12E8 , MUBW50-12T8 , MUBW50-17T8 , MUBW75-06A8 , MUBW75-12T8 , MUBW75-17T8 , FGH60N60SMD , MWI100-12A8 , MWI100-12E8 , MWI100-12T8T , MWI150-06A8 , MWI150-12T8T , MWI15-12A6K , MWI15-12A7 , MWI200-06A8 .

 

 
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