GA600GD25S Todos los transistores

 

GA600GD25S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GA600GD25S

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1920 W

|Vce|ⓘ - Tensión máxima colector-emisor: 250 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 17 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.25 V @25℃

trⓘ - Tiempo de subida, typ: 950 nS

Coesⓘ - Capacitancia de salida, typ: 9754 pF

Encapsulados: MODULE

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GA600GD25S datasheet

 ..1. Size:281K  international rectifier
 ga600gd25s.pdf pdf_icon

GA600GD25S

PD -50071B GA600GD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 250V Standard speed, optimized for battery powered application Very low conduction losses VCE(on) typ. = 1.25V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit

 9.1. Size:229K  international rectifier
 ga600hd25s.pdf pdf_icon

GA600GD25S

PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features Features Features Features Features VCES = 250V Standard speed, optimized for battery powered application Very low conduction losses VCE(on) typ. = 1.20V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit

Otros transistores... GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , IRGB20B60PD1 , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 .

History: SKM200GA123D | BT15T120CNR | ISL9V2040S3S | SKM200GAL123D | FGA40S65SH | JT050N120F2MA1E | AOK40B60D1

 

 

 

 

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