GA600GD25S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GA600GD25S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1920 W
|Vce|ⓘ - Tensión máxima colector-emisor: 250 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 17 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.25 V @25℃
trⓘ - Tiempo de subida, typ: 950 nS
Coesⓘ - Capacitancia de salida, typ: 9754 pF
Encapsulados: MODULE
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GA600GD25S datasheet
ga600gd25s.pdf
PD -50071B GA600GD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 250V Standard speed, optimized for battery powered application Very low conduction losses VCE(on) typ. = 1.25V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit
ga600hd25s.pdf
PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features Features Features Features Features VCES = 250V Standard speed, optimized for battery powered application Very low conduction losses VCE(on) typ. = 1.20V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit
Otros transistores... GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , IRGB20B60PD1 , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 .
History: GA250TD120U | GA300TD60U
History: GA250TD120U | GA300TD60U
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