GA600GD25S Todos los transistores

 

GA600GD25S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GA600GD25S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1920 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 250 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 17 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.25 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 950 nS
   Coesⓘ - Capacitancia de salida, typ: 9754 pF
   Paquete / Cubierta: MODULE
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GA600GD25S Datasheet (PDF)

 ..1. Size:281K  international rectifier
 ga600gd25s.pdf pdf_icon

GA600GD25S

PD -50071BGA600GD25S StandardTM Speed IGBTSINGLE SWITCH IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 250V Standard speed, optimized for battery powered application Very low conduction lossesVCE(on) typ. = 1.25V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit

 9.1. Size:229K  international rectifier
 ga600hd25s.pdf pdf_icon

GA600GD25S

PD - 94341GA600HD25S StandardTM Speed IGBTSINGLE SWITCH IGBT DOUBLE INT-A-PakFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 250V Standard speed, optimized for battery powered application Very low conduction lossesVCE(on) typ. = 1.20V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit

Otros transistores... GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , RJH60F7BDPQ-A0 , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 .

History: MMG150CE065PD6TC | NCE20TD60BF | IXGP30N60C3D4 | NCE40TD120BT | IGZ50N65H5 | IXGR40N60CD1 | IRG4MC40U

 

 
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