GA600GD25S PDF and Equivalents Search

 

GA600GD25S Specs and Replacement

Type Designator: GA600GD25S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1920 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 17 V

|Ic| ⓘ - Maximum Collector Current: 600 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.25 V @25℃

tr ⓘ - Rise Time, typ: 950 nS

Coesⓘ - Output Capacitance, typ: 9754 pF

Package: MODULE

 GA600GD25S Substitution

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GA600GD25S datasheet

 ..1. Size:281K  international rectifier
 ga600gd25s.pdf pdf_icon

GA600GD25S

PD -50071B GA600GD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-PAK Features Features Features Features Features VCES = 250V Standard speed, optimized for battery powered application Very low conduction losses VCE(on) typ. = 1.25V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit... See More ⇒

 9.1. Size:229K  international rectifier
 ga600hd25s.pdf pdf_icon

GA600GD25S

PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features Features Features Features Features VCES = 250V Standard speed, optimized for battery powered application Very low conduction losses VCE(on) typ. = 1.20V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit... See More ⇒

Specs: GA200TD120U, GA250TD120U, GA250TS60U, GA300TD60U, GA400TD25S, GA400TD60U, GA500TD60U, GA50TS120U, IRGB20B60PD1, GA75TS120U, GA75TS60U, GT10G101, GT10J301, GT10J311, GT10Q301, GT10Q311, GT15G101

Keywords - GA600GD25S transistor spec

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