All IGBT. GA600GD25S Datasheet

 

GA600GD25S Datasheet and Replacement


   Type Designator: GA600GD25S
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1920 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 17 V
   |Ic| ⓘ - Maximum Collector Current: 600 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.25 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 950 nS
   Coesⓘ - Output Capacitance, typ: 9754 pF
   Qg ⓘ - Total Gate Charge, typ: 3825 nC
   Package: MODULE
 

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GA600GD25S Datasheet (PDF)

 ..1. Size:281K  international rectifier
 ga600gd25s.pdf pdf_icon

GA600GD25S

PD -50071BGA600GD25S StandardTM Speed IGBTSINGLE SWITCH IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 250V Standard speed, optimized for battery powered application Very low conduction lossesVCE(on) typ. = 1.25V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit

 9.1. Size:229K  international rectifier
 ga600hd25s.pdf pdf_icon

GA600GD25S

PD - 94341GA600HD25S StandardTM Speed IGBTSINGLE SWITCH IGBT DOUBLE INT-A-PakFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 250V Standard speed, optimized for battery powered application Very low conduction lossesVCE(on) typ. = 1.20V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit

Datasheet: GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , IRG4PC40W , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 .

Keywords - GA600GD25S transistor datasheet

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