GA600GD25S Datasheet and Replacement
Type Designator: GA600GD25S
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1920 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 17 V
|Ic|ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.25 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 950 nS
Coesⓘ - Output Capacitance, typ: 9754 pF
Package: MODULE
- IGBT Cross-Reference
GA600GD25S Datasheet (PDF)
ga600gd25s.pdf

PD -50071BGA600GD25S StandardTM Speed IGBTSINGLE SWITCH IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 250V Standard speed, optimized for battery powered application Very low conduction lossesVCE(on) typ. = 1.25V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit
ga600hd25s.pdf

PD - 94341GA600HD25S StandardTM Speed IGBTSINGLE SWITCH IGBT DOUBLE INT-A-PakFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 250V Standard speed, optimized for battery powered application Very low conduction lossesVCE(on) typ. = 1.20V HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package @VGE = 15V, IC = 600A UL recognit
Datasheet: GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , RJH60F7BDPQ-A0 , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - GA600GD25S transistor datasheet
GA600GD25S cross reference
GA600GD25S equivalent finder
GA600GD25S lookup
GA600GD25S substitution
GA600GD25S replacement
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50



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