GA75TS60U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GA75TS60U
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 285
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 75
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
Tensión máxima de puerta-umbral |VGE(th)|, V: 6
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 94
Capacitancia de salida (Cc), typ, pF: 770
Carga total de la puerta (Qg), typ, nC: 340
Paquete / Cubierta: MODULE
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GA75TS60U Datasheet (PDF)
ga75ts60u.pdf
PD -50050CGA75TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.7V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 75A HEXFRED an
ga75ts120u.pdf
PD - 50062AGA75TS120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.1V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 75A HEXFRED antiparallel diodes with ultra- soft
ga75ts12.pdf
GA75TS120UPbFVishay High Power Products"Half-Bridge" IGBT INT-A-PAK(Ultrafast Speed IGBT), 75 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL ap
Otros transistores... GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S , GA75TS120U , IRGB20B60PD1 , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ